Methods for enhancing selectivity in SAM-based selective deposition

A method of selective deposition comprising:

• exposing a patterned substrate to a SAM molecule to form a protected second surface and a carbonized layer on the first surface, the patterned substrate comprising a first metal surface comprising ruthenium or cobalt and a second dielectric surface;
• exposing the patterned substrate to oxygen gas at a temperature in the range of about 250° C. to about 300° C. for a period in the range of about 30 seconds to about 2 minutes to remove the carbonized layer from the first surface;
• and
• sequentially exposing the substrate to a plurality of reactants to selectively deposit a dielectric material on the first surface over the second surface.