H10P 14/42
Using a gas or vapour
Official title: using a gas or vapour
H10P14/42 (Using a gas or vapour) appears on 4,618 US grants and 5,320 published applications in this corpus.
Search patents in H10P- Granted patents
- 4,618
- Published applications
- 5,320
- Assignees
- 686
- Inventors
- 7,151
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 4 | 0 |
| 1985 | 3 | 0 |
| 1986 | 6 | 0 |
| 1987 | 7 | 0 |
| 1988 | 6 | 0 |
| 1989 | 5 | 0 |
| 1990 | 9 | 0 |
| 1991 | 9 | 0 |
| 1992 | 16 | 0 |
| 1993 | 27 | 0 |
| 1994 | 17 | 0 |
| 1995 | 13 | 0 |
| 1996 | 18 | 0 |
| 1997 | 23 | 0 |
| 1998 | 40 | 0 |
| 1999 | 45 | 0 |
| 2000 | 98 | 0 |
| 2001 | 128 | 61 |
| 2002 | 170 | 230 |
| 2003 | 174 | 225 |
| 2004 | 175 | 210 |
| 2005 | 158 | 221 |
| 2006 | 126 | 219 |
| 2007 | 140 | 181 |
| 2008 | 119 | 187 |
| 2009 | 115 | 179 |
| 2010 | 167 | 144 |
| 2011 | 112 | 127 |
| 2012 | 118 | 125 |
| 2013 | 113 | 101 |
| 2014 | 111 | 154 |
| 2015 | 149 | 247 |
| 2016 | 199 | 261 |
| 2017 | 230 | 247 |
| 2018 | 220 | 293 |
| 2019 | 267 | 302 |
| 2020 | 243 | 289 |
| 2021 | 215 | 245 |
| 2022 | 184 | 262 |
| 2023 | 148 | 243 |
| 2024 | 202 | 246 |
| 2025 | 189 | 205 |
| 2026 | 95 | 116 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method for gapfill6 Oct 2026US 12,757,698 B2APPLIED Materials.Inc.
- Physical vapor deposition system and methods of operating the same29 Sep 2026US 12,747,492 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof22 Sep 2026US 12,745,422 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method of operating a PVD apparatus22 Sep 2026US 12,745,577 B2SPTS Technologies Limited
- Electronic device including s-shaped staggered contacts8 Sep 2026US 12,729,429 B2APPLIED Materials.Inc.
- Method of forming protective film on outer circumferential portion including bevel portion of substrate8 Oct 2026US 2026/0311973 A1Ebara Corporation
- Semiconductor device structure and method for forming the same8 Oct 2026US 2026/0313987 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods and systems for filling a gap8 Oct 2026US 2026/0314279 A1ASM IP Holding B. V.
- Film formation method and film formation apparatus1 Oct 2026US 2026/0297728 A1Tokyo Electron Limited
- Semiconductor device and method for manufacturing semiconductor device1 Oct 2026US 2026/0304803 A1Jusung Engineering Co., Ltd.
Most cited
By later US patents
- Contact structure of semiconductor device1,648US 9,105,490 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers1,159US 5,278,100 AMicron Technology, Inc. · 1994
- Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor1,063US 6,287,965 B1Samsung Electronics Co., Ltd. · 2001
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Method for forming metal layer using atomic layer deposition892US 6,174,809 B1Samsung Electronics Co., Ltd. · 2001