Semiconductor device and method for manufacturing semiconductor device

Abstract

A semiconductor device according to an embodiment of the present invention includes an electrode formed on a substrate and including a noble metal-containing layer, a dielectric layer formed on one surface of the noble metal-containing layer, and a capping layer formed between the noble metal-containing layer and the dielectric layer and containing titanium (Ti). Therefore, according to embodiments of the present invention, it is possible to suppress or prevent occurrence of defects at an interface between the electrode and the dielectric layer. Accordingly, a reduction in the dielectric constant of the dielectric layer may be suppressed or prevented, and the dielectric constant of the dielectric layer may be uniform. Further, the bonding force of the dielectric layer may be enhanced.

Dependencies are inferred from the claim text.