H10P 14/40
Formation of materials: of conductive or resistive materials
Official title: of conductive or resistive materials
H10P14/40 (Formation of materials: of conductive or resistive materials) appears on 11,404 US grants and 12,815 published applications in this corpus.
Search patents in H10P- Granted patents
- 11,404
- Published applications
- 12,815
- Assignees
- 1,579
- Inventors
- 16,935
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 15 | 0 |
| 1977 | 18 | 0 |
| 1978 | 7 | 0 |
| 1979 | 13 | 0 |
| 1980 | 12 | 0 |
| 1981 | 10 | 0 |
| 1982 | 15 | 0 |
| 1983 | 9 | 0 |
| 1984 | 14 | 0 |
| 1985 | 15 | 0 |
| 1986 | 17 | 0 |
| 1987 | 19 | 0 |
| 1988 | 19 | 0 |
| 1989 | 21 | 0 |
| 1990 | 28 | 0 |
| 1991 | 32 | 0 |
| 1992 | 43 | 0 |
| 1993 | 55 | 0 |
| 1994 | 46 | 0 |
| 1995 | 37 | 0 |
| 1996 | 38 | 0 |
| 1997 | 49 | 0 |
| 1998 | 81 | 0 |
| 1999 | 105 | 0 |
| 2000 | 225 | 0 |
| 2001 | 319 | 158 |
| 2002 | 410 | 493 |
| 2003 | 417 | 493 |
| 2004 | 402 | 559 |
| 2005 | 334 | 538 |
| 2006 | 304 | 529 |
| 2007 | 308 | 411 |
| 2008 | 248 | 332 |
| 2009 | 268 | 335 |
| 2010 | 321 | 300 |
| 2011 | 253 | 266 |
| 2012 | 244 | 325 |
| 2013 | 258 | 322 |
| 2014 | 335 | 492 |
| 2015 | 489 | 766 |
| 2016 | 683 | 789 |
| 2017 | 739 | 747 |
| 2018 | 612 | 695 |
| 2019 | 660 | 737 |
| 2020 | 630 | 683 |
| 2021 | 553 | 532 |
| 2022 | 388 | 526 |
| 2023 | 343 | 468 |
| 2024 | 383 | 505 |
| 2025 | 363 | 435 |
| 2026 | 197 | 379 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Methods of growing metal-containing films6 Oct 2026US 12,753,498 B2APPLIED Materials.Inc.
- Enhancement-mode HEMT and manufacturing process of the same6 Oct 2026US 12,757,427 B2STMicroelectronics S,r.l.
- Electroless deposition process for semiconductor devices6 Oct 2026US 12,757,651 B2
- Semiconductor device with catalytic conductive layer and method for fabricating the same6 Oct 2026US 12,757,692 B2Nanya Technology Corporation
- Semiconductor device with catalytic conductive layer and method for fabricating the same6 Oct 2026US 12,757,693 B2Nanya Technology Corporation
- Raw material for chemical deposition containing organoruthenium compound, and chemical deposition method using the raw material for chemical deposition8 Oct 2026US 2026/0308188 A1TANAKA PRECIOUS METAL TECHNOLOGIES Co., Ltd.
- Method of forming protective film on outer circumferential portion including bevel portion of substrate8 Oct 2026US 2026/0311973 A1Ebara Corporation
- Semiconductor device structure and method for forming the same8 Oct 2026US 2026/0313987 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Image sensing device and methods of manufacturing the same8 Oct 2026US 2026/0314089 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Titanium nitride gapfill processes for semiconductor structures8 Oct 2026US 2026/0314278 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Contact structure of semiconductor device1,648US 9,105,490 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- FINFETs with wrap-around silicide and method forming the same1,436US 9,608,116 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers1,159US 5,278,100 AMicron Technology, Inc. · 1994
- Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor1,063US 6,287,965 B1Samsung Electronics Co., Ltd. · 2001
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003