H10P 14/412
Deposition of metallic or metal-silicide materials
Official title: {Deposition of metallic or metal-silicide materials}
H10P14/412 (Deposition of metallic or metal-silicide materials) appears on 1,654 US grants and 1,734 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,654
- Published applications
- 1,734
- Assignees
- 438
- Inventors
- 3,576
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 5 | 0 |
| 1978 | 3 | 0 |
| 1979 | 4 | 0 |
| 1980 | 0 | 0 |
| 1981 | 3 | 0 |
| 1982 | 6 | 0 |
| 1983 | 2 | 0 |
| 1984 | 3 | 0 |
| 1985 | 4 | 0 |
| 1986 | 6 | 0 |
| 1987 | 10 | 0 |
| 1988 | 7 | 0 |
| 1989 | 14 | 0 |
| 1990 | 16 | 0 |
| 1991 | 17 | 0 |
| 1992 | 13 | 0 |
| 1993 | 16 | 0 |
| 1994 | 11 | 0 |
| 1995 | 12 | 0 |
| 1996 | 9 | 0 |
| 1997 | 12 | 0 |
| 1998 | 12 | 0 |
| 1999 | 28 | 0 |
| 2000 | 44 | 0 |
| 2001 | 62 | 35 |
| 2002 | 66 | 67 |
| 2003 | 58 | 51 |
| 2004 | 63 | 59 |
| 2005 | 33 | 46 |
| 2006 | 34 | 50 |
| 2007 | 28 | 41 |
| 2008 | 20 | 25 |
| 2009 | 23 | 27 |
| 2010 | 33 | 30 |
| 2011 | 28 | 17 |
| 2012 | 26 | 33 |
| 2013 | 25 | 45 |
| 2014 | 49 | 42 |
| 2015 | 66 | 138 |
| 2016 | 102 | 94 |
| 2017 | 93 | 115 |
| 2018 | 97 | 114 |
| 2019 | 94 | 99 |
| 2020 | 90 | 92 |
| 2021 | 76 | 74 |
| 2022 | 56 | 62 |
| 2023 | 42 | 53 |
| 2024 | 52 | 82 |
| 2025 | 44 | 76 |
| 2026 | 34 | 167 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Enhancement-mode HEMT and manufacturing process of the same6 Oct 2026US 12,757,427 B2STMicroelectronics S,r.l.
- Semiconductor device with catalytic conductive layer and method for fabricating the same6 Oct 2026US 12,757,692 B2Nanya Technology Corporation
- Semiconductor device with catalytic conductive layer and method for fabricating the same6 Oct 2026US 12,757,693 B2Nanya Technology Corporation
- Semiconductor device with metal silicide layer and method for manufacturing the same29 Sep 2026US 12,751,059 B2Kabushiki Kaisha Toshiba
- Metal-on-metal deposition methods for filling a gap feature on a substrate surface8 Sep 2026US 12,729,430 B2ASM IP Holding B. V.
- Method of stress release in silicon carbide devices1 Oct 2026US 2026/0305201 A1STMicroelectronics International N. V.
- Semiconductor devices and methods of fabricating the same24 Sep 2026US 2026/0293256 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Low mass ion etch for cavity shaping engineering for cmos devices24 Sep 2026US 2026/0293632 A1APPLIED Materials.Inc.
- Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus17 Sep 2026US 2026/0275504 A1Kokusai Electric Corporation
- Method for forming metal nitride thin film17 Sep 2026US 2026/0275508 A1Wonik Ips Co., Ltd.
Most cited
By later US patents
- Method of producing titanium nitride MOS device gate electrode640US 4,570,328 AMotorola, Inc. · 1986
- Selective formation of metallic films on metallic surfaces573US 8,956,971 B2ASM International N.V. · 2015
- Gate structure for semiconductor device527US 8,847,293 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Methodology for in-situ doping of aluminum coatings518US 6,534,133 B1The Research Foundation of State University of New York · 2003
- Methods of selectively forming a material using parylene coating500US 8,945,305 B2Micron Technology, Inc. · 2015