Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus
AssigneeKokusai Electric Corporation
InventorsYutaka MATSUNO, Atsuro SEINO, Arito OGAWA
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Abstract
A technique includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: forming a layer on the substrate by performing a process, which includes: (a) supplying a precursor gas containing a halogen element to the substrate; and (b) supplying a reaction gas to the substrate, wherein the cycle is performed under a formation condition set based on a predetermined relationship between an amount of the halogen element contained in the layer and a proportion of crystallites oriented in a predetermined crystal plane in the film.
Claims20
A method of processing a substrate, comprising:
- forming a film on the substrate by performing a cycle a predetermined number of times, the cycle comprising:
- forming a layer on the substrate by performing a process, which includes:
- (a) supplying a precursor gas containing a halogen element to the substrate;
- and
- (b) supplying a reaction gas to the substrate,
- wherein the cycle is performed under a formation condition set based on a predetermined relationship between an amount of the halogen element contained in the layer and a proportion of crystallites oriented in a predetermined crystal plane in the film.
A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process comprising:
- forming a film on a substrate by performing a cycle a predetermined number of times, the cycle comprising:
- forming a layer on the substrate by performing a method, which includes:
- (a) supplying a precursor gas containing a halogen element to the substrate;
- and
- (b) supplying a reaction gas to the substrate,
- wherein the cycle is performed under a formation condition set based on a predetermined relationship between an amount of the halogen element contained in the layer and a proportion of crystallites oriented in a predetermined crystal plane in the film.
A substrate processing apparatus, comprising:
- a gas supply system configured to supply a precursor gas containing a halogen element and a reaction gas to a substrate;
- and
- a controller configured to be capable of controlling the gas supply system so as to perform a process including:
- forming a film on the substrate by performing a cycle a predetermined number of times, the cycle comprising:
- forming a layer on the substrate by performing a method, which includes:
- (a) supplying the precursor gas to the substrate;
- and
- (b) supplying the reaction gas to the substrate,
- wherein the cycle is performed under a formation condition set based on a predetermined relationship between an amount of the halogen element contained in the layer and a proportion of crystallites oriented in a predetermined crystal plane in the film.
Dependencies are inferred from the claim text.