Method of stress release in silicon carbide devices

An electronic device, comprising:

• a substrate of silicon carbide that is 4H-SiC polytype, the substrate having a first surface and a second surface opposite to the first surface;
• a first metal layer extending on and in direct physical contact with the second surface of the substrate;
• and
• a second metal layer extending on and in direct physical contact with the first metal layer,
• wherein the first metal layer has a first thickness and the second metal layer has a second thickness greater than the first thickness.

A method, comprising:

• thinning a silicon carbide substrate of a wafer, the wafer including a layer stack on the silicon carbide substrate and an electronic device in the layer stack;
• forming a first metal layer on the silicon carbide substrate;
• performing a first thermal treatment on the first metal layer;
• forming a second metal layer on the first metal layer;
• performing a second thermal treatment on the second metal layer;
• and
• forming a finishing layer on the second metal layer.