H10P 14/414
Of metal-silicide materials
Official title: {of metal-silicide materials}
H10P14/414 (Of metal-silicide materials) appears on 425 US grants and 426 published applications in this corpus.
Search patents in H10P- Granted patents
- 425
- Published applications
- 426
- Assignees
- 127
- Inventors
- 912
- Latest grant
- 14 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 4 | 0 |
| 1990 | 3 | 0 |
| 1991 | 4 | 0 |
| 1992 | 1 | 0 |
| 1993 | 2 | 0 |
| 1994 | 3 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 11 | 0 |
| 2000 | 16 | 0 |
| 2001 | 23 | 13 |
| 2002 | 19 | 18 |
| 2003 | 14 | 11 |
| 2004 | 15 | 7 |
| 2005 | 8 | 8 |
| 2006 | 5 | 11 |
| 2007 | 4 | 5 |
| 2008 | 3 | 5 |
| 2009 | 3 | 1 |
| 2010 | 8 | 8 |
| 2011 | 4 | 2 |
| 2012 | 3 | 11 |
| 2013 | 7 | 19 |
| 2014 | 17 | 17 |
| 2015 | 31 | 62 |
| 2016 | 44 | 37 |
| 2017 | 34 | 31 |
| 2018 | 30 | 28 |
| 2019 | 23 | 29 |
| 2020 | 29 | 20 |
| 2021 | 17 | 10 |
| 2022 | 9 | 9 |
| 2023 | 3 | 8 |
| 2024 | 7 | 14 |
| 2025 | 9 | 23 |
| 2026 | 1 | 19 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- RF switch device and method of manufacturing same14 Jul 2026US 12,685,177 B2DB HiTek Co., Ltd.
- Semiconductor device and method for manufacturing semiconductor device2 Dec 2025US 12,488,988 B2Hamamatsu Photonics K.K.
- Method of manufacturing a semiconductor device including a conductive line18 Nov 2025US 12,477,801 B2SK hynix Inc.
- Semiconductor device and a method for fabricating the same18 Nov 2025US 12,477,807 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for reducing contact resistance23 Sep 2025US 12,424,451 B2Shanghai Huali Integrated Circuit Corporation
- Method of stress release in silicon carbide devices1 Oct 2026US 2026/0305201 A1STMicroelectronics International N. V.
- Low mass ion etch for cavity shaping engineering for cmos devices24 Sep 2026US 2026/0293632 A1APPLIED Materials.Inc.
- Extended multi-sided storage nodes in three-dimensional (3d) memory17 Sep 2026US 2026/0282405 A1Micron Technology, Inc.
- Methods of manufacturing semiconductor devices17 Sep 2026US 2026/0282773 A1APPLIED Materials.Inc.
- Surface treatment method for silicon body and method of manufacturing silicon structural body6 Aug 2026US 2026/0231700 A1Nagano Prefecture
Most cited
By later US patents
- Selective formation of metallic films on metallic surfaces573US 8,956,971 B2ASM International N.V. · 2015
- Gate structure for semiconductor device527US 8,847,293 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Method of electroless plating copper on nitride barrier297US 6,436,816 B1Industrial Technology Research Institute · 2002
- Local interconnect structures and methods for making the same202US 6,436,805 B1Micron Technology, Inc. · 2002
- CMOS self-aligned strapped interconnection199US 6,388,296 B1Sharp Laboratories of America, Inc. · 2002