Extended multi-sided storage nodes in three-dimensional (3d) memory

A method, comprising:

• forming an array of vertically stacked memory cells including horizontally oriented access devices and storage nodes, the horizontally oriented access devices having gates formed horizontally at a different level from each other, channel regions, and first source/drain regions and second source/drain regions separated by the channel regions;
• forming a horizontal opening adjacent to storage node regions to access the second source/drain regions;
• epitaxially growing doped Si material on the second source/drain regions;
• forming a first electrode on the epitaxially grown doped Si material in the horizontal opening;
• selectively depositing a conductive element onto an exposed end surface of the first electrode to extend the first electrode to an original formation length;
• and
• forming multi-sided storage nodes having a high-k material on the first electrode and forming a second electrode on the high-k material.

A memory device, comprising:

• an array of vertically stacked memory cells, comprising:
• horizontally oriented access devices, the horizontally oriented access devices having gates formed horizontally at a different level from each other, channel regions, and first source/drain regions and second source/drain regions separated by the channel regions;
• and
• horizontally oriented storage nodes, wherein each storage node includes:
• a first electrode, extending in a horizontal direction from, and in electrical contact with, an interface material in contact with the second source/drain region of a given one of the vertically stacked memory cells, the first electrode having interior and exterior surfaces,
• a conductive element of a different type than the first electrode formed on an end surface of the first electrode;
• a dielectric material formed on the first electrode and the conductive element;
• and
• a second electrode separated from the interior and exterior surfaces of the first electrode by the dielectric material, wherein the second electrode is formed continuously in a vertical direction along the vertically stacked memory cells.