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US 12,477,807 B2Granted
Semiconductor device and a method for fabricating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Ming Hsu, Pei-Yu Chou, Chih-Pin Tsao, Kuang-Yuan Hsu, Jyh-Huei Chen
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Abstract
A semiconductor device includes a source/drain region, a source/drain silicide layer formed on the source/drain region, and a first contact disposed over the source/drain silicide layer. The first contact includes a first metal layer, an upper surface of the first metal layer is at least covered by a silicide layer, and the silicide layer includes a same metal element as the first metal layer.
Claims20
A semiconductor device including a field effect transistor, comprising:
- a source/drain region;
- a first interlayer dielectric (ILD) layer disposed over the source/drain region;
- a first contact disposed in the first ILD layer over the source/drain region;
- an adhesive layer disposed between the first contact and the first ILD layer;
- a second contact disposed over the first contact;
- an etch stop layer disposed over the first ILD layer;
- and
- a second ILD layer disposed over the first ILD layer, wherein:
- the first contact includes a first metal layer,
- an upper surface of the first metal layer is fully covered by a silicide layer,
- the silicide layer includes a same metal element as the first metal layer,
- an upper portion of a body of the silicide layer protrudes above an upper surface of the first ILD layer and above a top of the adhesive layer,
- a lower portion of the body of the silicide layer resides below the upper surface of the first ILD layer and below the top of the adhesive layer,
- the top of the adhesive layer is coplanar with the upper surface of the first ILD layer,
- the adhesive layer covers a side surface of the lower portion of the body of the silicide layer, and
- the etch stop layer partially covers an upper surface of the silicide layer and extends to cover a side surface of the upper portion of the body of the silicide layer.
13 more elements
A semiconductor device including a field effect transistor, comprising:
- a first interlayer dielectric (ILD) layer;
- a first contact disposed over an underlying conductive layer, and including a first metal layer embedded in the first ILD layer and an adhesive layer disposed between the first metal layer and the underlying conductive layer;
- a first silicide layer fully covering an upper surface of the first metal layer;
- an insulating layer disposed over the first ILD layer;
- a second ILD layer disposed over the insulating layer;
- and
- a second contact embedded in the second ILD layer and in contact with an upper surface of the first silicide layer, wherein:
- the first silicide layer is made of Co silicide and the first metal layer is made of Co,
- an upper portion of a body of the first silicide layer protrudes above an upper surface of the first ILD layer and above a top of the adhesive layer,
- a lower portion of the body of the first silicide layer resides below the upper surface of the first ILD layer and below the top of the adhesive layer,
- the top of the adhesive layer is coplanar with the upper surface of the first ILD layer,
- the adhesive layer covers a side surface of the lower portion of the body of the first silicide layer, and
- the insulating layer partially covers the upper surface of the first silicide layer and extends to cover a side surface of the upper portion of the body of the first silicide layer.
10 more elements
A semiconductor device including a field effect transistor, comprising:
- a first contact disposed over a conductive portion formed over a substrate and embedded in an interlayer dielectric layer, the first contact including a first metal layer and an adhesive layer disposed between the interlayer dielectric layer and the first metal layer;
- an insulating layer disposed over a portion of the first metal layer;
- and
- a second contact disposed over the first contact, wherein:
- an upper surface of the first metal layer is fully covered by a silicide layer,
- a top of the adhesive layer is coplanar with an upper surface of the interlayer dielectric layer,
- the adhesive layer covers a lower portion of a side surface of the silicide layer,
- the insulating layer covers an upper portion of the side surface of the silicide layer, and
- an area of a bottom of the second contact contacting the silicide layer is smaller than an area of a top of the first metal layer.
6 more elements
Dependencies are inferred from the claim text.