Method for forming metal nitride thin film
AssigneeWonik Ips Co., Ltd.
InventorsPil Geun YOON, Tae Hak KIM, Yeon Gang YOO
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Abstract
A method for forming a metal nitride thin film according to embodiments includes steps of: introducing a substrate into a process chamber having a processing space formed therein; forming a metal nitride thin film on the substrate by separately supplying a metal precursor gas and a nitrogen-containing gas; performing first surface treatment at least once on the metal nitride thin film by supplying a hydrogen-containing gas to the process chamber and forming a first plasma; and performing second surface treatment at least once on the first surface-treated metal nitride thin film by supplying a nitrogen-containing gas to the process chamber and forming a second plasma.
Claims10
A method for forming a metal nitride thin film, comprising steps of:
- introducing a substrate into a process chamber having a processing space formed therein;
- forming a metal nitride thin film on the substrate by separately supplying a metal precursor gas and a nitrogen-containing gas;
- performing first surface treatment at least once on the metal nitride thin film by supplying a hydrogen-containing gas to the process chamber and forming a first plasma;
- and
- performing second surface treatment at least once on the first surface-treated metal nitride thin film by supplying a nitrogen-containing gas to the process chamber and forming a second plasma.
Dependencies are inferred from the claim text.