H10P 14/416
Of highly doped semiconductor materials
Official title: {of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers}
H10P14/416 (Of highly doped semiconductor materials) appears on 545 US grants and 561 published applications in this corpus.
Search patents in H10P- Granted patents
- 545
- Published applications
- 561
- Assignees
- 167
- Inventors
- 1,188
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 5 | 0 |
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 3 | 0 |
| 1981 | 4 | 0 |
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 3 | 0 |
| 1985 | 2 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 2 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 2 | 0 |
| 1992 | 5 | 0 |
| 1993 | 3 | 0 |
| 1994 | 6 | 0 |
| 1995 | 4 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 4 | 0 |
| 1999 | 3 | 0 |
| 2000 | 4 | 0 |
| 2001 | 6 | 1 |
| 2002 | 11 | 12 |
| 2003 | 7 | 9 |
| 2004 | 7 | 11 |
| 2005 | 12 | 11 |
| 2006 | 7 | 7 |
| 2007 | 6 | 12 |
| 2008 | 3 | 5 |
| 2009 | 6 | 3 |
| 2010 | 4 | 8 |
| 2011 | 6 | 6 |
| 2012 | 6 | 12 |
| 2013 | 10 | 11 |
| 2014 | 12 | 20 |
| 2015 | 24 | 48 |
| 2016 | 46 | 60 |
| 2017 | 60 | 51 |
| 2018 | 41 | 38 |
| 2019 | 38 | 47 |
| 2020 | 42 | 44 |
| 2021 | 28 | 28 |
| 2022 | 24 | 31 |
| 2023 | 20 | 29 |
| 2024 | 25 | 28 |
| 2025 | 24 | 20 |
| 2026 | 10 | 9 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Methods of growing metal-containing films6 Oct 2026US 12,753,498 B2APPLIED Materials.Inc.
- Substrate processing method and substrate processing apparatus25 Aug 2026US 12,721,058 B2Tokyo Electron Limited
- Etching composition for selectively etching silicon nitride, etching method, and manufacturing method of semiconductor device using the same18 Aug 2026US 12,713,852 B2SK hynix Inc.
- Solar heating for thin film evaporation and directional solidification4 Aug 2026US 12,698,557 B2Blue Origin Manufacturing, LLC
- Method of manufacturing semiconductor structure using multi-layer hard mask2 Jun 2026US 12,648,411 B2Nanya Technology Corporation
- Semiconductor device and method of manufacturing the same25 Jun 2026US 2026/0181984 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for manufacturing semiconductor structure11 Jun 2026US 2026/0165042 A1Nanya Technology Corporation
- Polysilicon structure including protective layer23 Apr 2026US 2026/0114034 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Manufacturing method of semiconductor structure16 Apr 2026US 2026/0107444 A1Nanya Technology Corporation
- Doped silicon or boron layer formation26 Mar 2026US 2026/0090294 A1Lam Research Corporation
Most cited
By later US patents
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Method for forming insulation film using non-halide precursor having four or more silicons524US 8,784,951 B2ASM IP Holding B. V. · 2014
- Method for forming layer constituted by repeated stacked layers524US 9,018,093 B2ASM IP Holding B. V. · 2015
- Trench-filling method and film-forming system489US 8,722,510 B2Tokyo Electron Limited · 2014
- Method of forming silicon film344US 9,922,824 B2Tokyo Electron Limited · 2018