Method for forming insulation film using non-halide precursor having four or more silicons
AssigneeASM IP Holding B.V.
InventorsAtsuki Fukazawa, Hideaki Fukuka
Life of this patent
Estimating the term…
Abstract
A method of forming an insulation film on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: (i) adsorbing a non-excited non-halide precursor having four or more silicon atoms in its molecule onto a substrate placed in a reaction space; (ii) supplying an oxygen-free reactant to the reaction space without applying RF power so as to expose the precursor-adsorbed substrate to the reactant; and (iii) after step (ii), applying RF power to the reaction space while the oxygen-free reactant is supplied in the reaction space; and (iv) repeating steps (i) to (iii) as a cycle, thereby depositing an insulation film on the substrate.
Claims15
A method of forming an insulation film on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), which comprises:
- (i) adsorbing a non-excited non-halide precursor having four or more silicon atoms in its molecule onto a substrate placed in a reaction space, thereby producing a precursor-adsorbed substrate;
- (ii) supplying an oxygen-free reactant to the reaction space without applying RF power so as to expose the precursor-adsorbed substrate to the oxygen-free reactant, said oxygen-free reactant consisting of NH3 or a combination of He and N2;
- and
- (iii) after step (ii), applying RF power to the reaction space while the oxygen-free reactant is supplied in the reaction space;
- and
- (iv) repeating steps (i) to (iii) as a cycle, thereby depositing an insulation film on the substrate wherein the insulation film is constituted by SiN or SiCN.
A method of forming an insulation film on a semiconductor substract by plasma enhanced atomic layer deposition (PEALD), which comprises:
- (i) absorbing a non-excited non-halide precursor having four or more silicon atoms in its molecule onto a substrate placed in a reaction space, thereby producing a precursor-adsorbed substrate;
- (ii) supplying an oxygen-free reactant to the reaction space without applying RF power so as to expose the precursor-adsorbed substrate to the oxygen-free reactant;
- and
- (iii) after step (ii), applying RF power to the reaction space while the oxygen-free reactant is supplied in the reaction space;
- and
- (iv) repeating steps (i) to (iii) as a cycle, thereby depositing and insulation film on the substrate,
- said method further comprising purging the reaction space between steps (i) and (ii) and between step (iii) and subsequent step (i) in the next cycle, and further comprising applying RF power in a pulse immediately prior to step (ii) after step (i), and supplying another reactant while applying RF power immediately prior to step (ii) after step (i).
A method of forming an insulation film on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), which comprises:
- (i) absorbing a non-excited non-halide precursor having four or more silicon atoms in its molecule onto a substrate placed in reaction space, thereby producing a precursor-absorbed substrate;
- (ii) supplying an oxygen-free reactant to the reaction space without applying RF power so as to expose the precursor-adsorbed substrate to the oxygen-free reactant, said oxygen-free reactant consisting of He, H2, or a mixture of He and H2;
- and
- (iii) after step (ii), applying RF power to the reaction space while the oxygen-free reactant is supplied in the reaction space;
- and
- (iv) repeating steps (i) to (iii) as a cycle, thereby depositing an insulation film on the substrate,
- wherein the insulation film is constituted by amorphous silicon.
Dependencies are inferred from the claim text.