Doped silicon or boron layer formation
AssigneeLam Research Corporation
InventorsNuoya Yang, Yuxi Wang, Bo Gong, Andrew John McKerrow
Life of this patent
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Abstract
An amorphous silicon layer or amorphous boron layer can be deposited on a substrate using one or more silicon or boron-containing precursors, respectively. Radical species are provided from a plasma source or from a controlled reaction chamber atmosphere to convert the amorphous silicon layer to a doped silicon layer with composition tunability. An initiation layer is deposited on one or more semiconductor device structures having a dielectric layer over an electrically conductive layer. The initiation layer may be conformally deposited by a CVD-based process and may comprises amorphous silicon, doped silicon, amorphous boron, or doped boron.
Claims21
1-10. (canceled)
A method of forming a doped silicon layer, comprising:
- forming an amorphous silicon layer on a semiconductor substrate in a reaction chamber;
- and
- exposing the amorphous silicon layer to a gas plasma flow to convert the amorphous silicon layer to the doped silicon layer.
A method of forming a doped silicon layer comprising:
- forming a conformal silicon layer on a substrate in a reaction chamber;
- generating a remote plasma of a source gas in a remote plasma source, wherein the source gas comprises one or more of the following:
- nitrogen, oxygen, hydrogen, or carbon;
- and
- exposing the conformal silicon layer to the remote plasma to convert the conformal silicon layer to the doped silicon layer.
Dependencies are inferred from the claim text.