US 2026/0107444 A1Published application

Manufacturing method of semiconductor structure

AssigneeNanya Technology Corporation

InventorPei-Jhu SIE

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Abstract

A manufacturing method of a semiconductor structure is provided. The method includes following steps. A substrate is provided, and the substrate has a first array region, a second array region, and a periphery region. A first lower conductive layer is formed on the substrate, the first lower conductive layer continuously has a first portion in the first array region, a second portion in the second array region, and a third portion in the periphery region. The first portion of the first lower conductive layer and the second portion of the first lower conductive layer are removed. A second lower conductive layer is formed on the substrate. The second lower conductive and the first lower conductive layer comprise the same material such that the second lower conductive and the first lower conductive layer form a lower conductive layer collectively.

Claims15

Dependent claims

A method of manufacturing semiconductor structure, comprising:

providing a substrate, the substrate having a first array region, a second array region, and a periphery region, wherein the second array region surrounds the first array region and the periphery region surrounds the second array region;
forming a first lower conductive layer on the substrate, the first lower conductive layer continuously having a first portion in the first array region, a second portion in the second array region, and a third portion in the periphery region, wherein the top surface of the first portion is higher than the top surface of the second portion and the third portion, and the top surface of the second portion is coplanar with the top surface of the third portion;
removing the first portion of the first lower conductive layer and the second portion of the first lower conductive layer;
and
forming a second lower conductive layer on the substrate, the second lower conductive layer continuously having a first portion on the substrate in the first array region, a second portion on the substrate in the second array region, and a third portion on the third portion of the first lower conductive layer,
wherein the top surface of the third portion of the second lower conductive layer is higher than the top surface of the first portion of the second lower conductive layer, and the first portion of the second lower conductive layer is higher than the top surface of the second portion of the second lower conductive layer, and
wherein the second lower conductive and the first lower conductive layer comprise the same material such that the second lower conductive and the first lower conductive layer form a lower conductive layer collectively.

4 more elements

A method of manufacturing semiconductor structure, comprising:

providing a substrate, the substrate having a first array region, a second array region, and a periphery region, wherein the top surface of the substrate in the first array region is higher than the top surface of the substrate in the second array region and the periphery region, and the top surface of the substrate in the second array region is coplanar with the top surface of the substrate in the periphery region;
forming a first lower conductive layer on the substrate, the first lower conductive layer continuously having a first portion in the first array region, a second portion in the second array region, and a third portion in the periphery region, wherein the first portion, the second portion, and the third portion of the first lower conductive layer have the same thickness;
removing the first portion of the first lower conductive layer and the second portion of the first lower conductive layer;
and
forming a second lower conductive layer on the substrate, the second lower conductive layer continuously having a first portion on the substrate in the first array region, a second portion on the substrate in the second array region, and a third portion on the third portion of the first lower conductive layer,
wherein the first portion, the second portion, and the third portion of the second lower conductive layer have the same thickness, and
wherein the second lower conductive and the first lower conductive layer comprise polysilicon such that the second lower conductive and the first lower conductive layer form a lower conductive layer collectively.

4 more elements

Dependencies are inferred from the claim text.