Method of manufacturing semiconductor structure using multi-layer hard mask

A method for manufacturing a semiconductor structure, comprising:

• providing a substrate;
• forming a multi-layer structure over the substrate, wherein the multi-layer structure includes a first carbon layer, a silicon layer, an oxide layer, and a second carbon layer sequentially arranged over the substrate;
• patterning the second carbon layer to form a first patterned carbon layer;
• patterning the oxide layer using the first patterned carbon layer as a mask to form a first patterned oxide layer, wherein the first patterned oxide layer is extended from a top surface of the silicon layer;
• forming a recess on the top surface of the silicon layer adjacent to the first pattern oxide layer by removing a surficial portion of the silicon layer;
• forming a second patterned oxide layer on the recess, wherein portions of the second patterned oxide layer are separated from and alternately arranged with portions of the first patterned oxide layer;
• and
• transferring a pattern of the first patterned oxide layer and the second patterned oxide layer to the substrate.