Physical vapor deposition system and methods of operating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Hsi Wang, Yen-Yu Chen
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Abstract
A method for fabricating semiconductor devices is disclosed. The method includes introducing a target in a chamber of a physical vapor deposition (PVD) system. The method includes depositing, on a substrate, a first portion of a film based on a first compensation function, a first value of the first compensation function being determined according to a lifetime of the target. The method includes depositing, on the first portion of the film, a second portion of the film based on a second compensation function, a second value of the second compensation function being determined according to the lifetime of the target. The first value is different from the second value.
Claims20
A method for fabricating semiconductor devices, comprising:
- introducing a target in a chamber of a physical vapor deposition (PVD) system;
- depositing, on a substrate, a first portion of a film based on a first compensation function, a first value of the first compensation function being determined according to a lifetime of the target;
- and
- depositing, on the first portion of the film, a second portion of the film based on a second compensation function, a second value of the second compensation function being determined according to the lifetime of the target;
- wherein the first value is different from the second value;
- wherein a first thickness of the first portion is determined based on a target thickness of the first portion and the lifetime of the target.
A method for fabricating semiconductor devices, comprising:
- introducing a target in a chamber of a deposition system;
- identifying a lifetime of the target;
- determining a first value of a first compensation function based on the identified lifetime;
- determining a second value of a second compensation function based on the identified lifetime;
- transitioning, according to the first value, the target from a first phase to a second phase to deposit a first portion of a film on a substrate;
- and
- transitioning, according to the second value, the target from the first phase to the second phase to deposit a second portion of the film on its first portion;
- wherein a first thickness of the first portion decreases as the lifetime of the target increases and a second thickness of the second portion increases as the lifetime of the target increases.
An apparatus for fabricating semiconductor devices, comprising:
- a substrate support configured to place a substrate in a chamber body;
- a target holder configured to place a target, with an exposed surface of the target facing the substrate;
- a magnet assembly comprising a magnet disposed above the target and an electromagnet disposed around the chamber body;
- a gas source configured to supply a plasma-forming gas, wherein the plasma-forming gas is configured to transition the target from a first phase to a second phase;
- and
- a controller configured to determine a first value of a first compensation function according to a lifetime of the target, and a second value of a second compensation function according to the lifetime of the target;
- wherein a first portion of a film formed on the substrate is formed by depositing the target in the second phase based on the first value, and a second portion of the film formed on the first portion is formed by depositing the target in the second phase based on the second value.
Dependencies are inferred from the claim text.