Back to results
US 2026/0314279 A1Published application
Methods and systems for filling a gap
AssigneeASM IP Holding B.V.
InventorsTimothee Blanquart, René Henricus Jozef Vervuurt, Giuseppe Alessio Verni, Ren-Jie Chang, Charles Dezelah, Qi Xie, Viljami Pore
Life of this patent
Estimating the term…
Abstract
Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a gap filling process by means of a plasma-enhanced deposition process. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.
Claims20
A system comprising:
- a reaction chamber;
- a remote plasma source;
- a precursor gas source comprising a precursor and coupled to the reaction chamber;
- a reactant gas source comprising a reactant and coupled to the reaction chamber;
- a nitrogen reactant source comprising a nitrogen reactant;
- and
- a controller configured to control gas flow into the reaction chamber to form a layer on a substrate by:
- providing a substrate to the reaction chamber, the substrate comprising a gap;
- providing the precursor to the reaction chamber;
- providing the reactant;
- providing the nitrogen reactant;
- and
- generating a plasma during at least one of providing the precursor to the reaction chamber or providing the reactant to the reaction chamber,
- thereby allowing the precursor and the reactant to form a gap filling fluid, and
- thereby at least partially filling the gap with the gap filling fluid, the gap filling fluid comprising a metal or metalloid,
- wherein one or more deposition cycles comprise the providing the precursor, the providing the reactant, and the providing the nitrogen reactant, a deposition cycle of the one or more deposition cycles comprising a precursor pulse, a reactant pulse, and a nitrogen reactant pulse,
- wherein the precursor pulse comprises providing the precursor to the reaction chamber,
- wherein the reactant pulse comprises providing the reactant to the reaction chamber, and
- wherein the nitrogen reactant pulse comprises providing the nitrogen reactant to at least one of the reaction chamber, a plasma generation space, or the remote plasma source, and
- wherein the deposition cycle comprises sequentially executing a plurality of subsequent precursor pulses and nitrogen reactant pulses before, during, or after executing a reactant pulse.
17 more elements
A system comprising:
- a first reaction chamber;
- a second reaction chamber;
- one or more of a remote plasma source or an indirect plasma system;
- a precursor gas source comprising a precursor and coupled to the first reaction chamber;
- a reactant gas source comprising a reactant and coupled to the second reaction chamber;
- a nitrogen reactant source comprising a nitrogen reactant and coupled to the first reaction chamber;
- and
- a controller configured to control gas flow to form a layer on a substrate by:
- providing the precursor to the first reaction chamber;
- providing the reactant to the second reaction chamber;
- generating a plasma in at least one of the first reaction chamber or the second reaction chamber;
- and
- executing a plurality of deposition cycles, each deposition cycle comprising:
- moving the substrate to the first reaction chamber;
- and
- moving the substrate to the second reaction chamber;
- thereby allowing the precursor and the reactant to form a gap filling fluid, and
- thereby at least partially filling a gap with the gap filling fluid, the gap filling fluid comprising a metal or a metalloid,
- wherein each deposition cycle further comprises a nitrogen reactant pulse, and
- wherein the precursor comprises a metal halide and the reactant comprises an oxygen reactant.
17 more elements
Dependencies are inferred from the claim text.