H10P 14/43
Chemical deposition
Official title: Chemical deposition, e.g. chemical vapour deposition [CVD]
H10P14/43 (Chemical deposition) appears on 3,375 US grants and 3,958 published applications in this corpus.
Search patents in H10P- Granted patents
- 3,375
- Published applications
- 3,958
- Assignees
- 461
- Inventors
- 5,074
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 1 | 0 |
| 1986 | 5 | 0 |
| 1987 | 4 | 0 |
| 1988 | 5 | 0 |
| 1989 | 4 | 0 |
| 1990 | 8 | 0 |
| 1991 | 8 | 0 |
| 1992 | 13 | 0 |
| 1993 | 21 | 0 |
| 1994 | 13 | 0 |
| 1995 | 10 | 0 |
| 1996 | 10 | 0 |
| 1997 | 16 | 0 |
| 1998 | 24 | 0 |
| 1999 | 34 | 0 |
| 2000 | 64 | 0 |
| 2001 | 85 | 48 |
| 2002 | 114 | 179 |
| 2003 | 133 | 175 |
| 2004 | 125 | 155 |
| 2005 | 122 | 165 |
| 2006 | 96 | 169 |
| 2007 | 108 | 133 |
| 2008 | 90 | 145 |
| 2009 | 92 | 121 |
| 2010 | 121 | 99 |
| 2011 | 77 | 87 |
| 2012 | 79 | 89 |
| 2013 | 80 | 81 |
| 2014 | 80 | 107 |
| 2015 | 110 | 167 |
| 2016 | 134 | 180 |
| 2017 | 156 | 164 |
| 2018 | 146 | 198 |
| 2019 | 182 | 213 |
| 2020 | 187 | 230 |
| 2021 | 161 | 191 |
| 2022 | 139 | 216 |
| 2023 | 120 | 192 |
| 2024 | 160 | 206 |
| 2025 | 163 | 154 |
| 2026 | 71 | 94 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method for gapfill6 Oct 2026US 12,757,698 B2APPLIED Materials.Inc.
- Electronic device including s-shaped staggered contacts8 Sep 2026US 12,729,429 B2APPLIED Materials.Inc.
- Semiconductor device structure with boron- and nitrogen-containing material and method for forming the same8 Sep 2026US 12,733,222 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for semiconductor processing8 Sep 2026US 12,733,414 B2Tokyo Electron Limited
- Vacuum packaging manufacturing method and semiconductor devices manufactured thereby25 Aug 2026US 12,721,057 B2Seoul National University R&Db Foundation
- Method of forming protective film on outer circumferential portion including bevel portion of substrate8 Oct 2026US 2026/0311973 A1Ebara Corporation
- Semiconductor device structure and method for forming the same8 Oct 2026US 2026/0313987 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods and systems for filling a gap8 Oct 2026US 2026/0314279 A1ASM IP Holding B. V.
- Semiconductor device and method for manufacturing semiconductor device1 Oct 2026US 2026/0304803 A1Jusung Engineering Co., Ltd.
- Vapor deposition processes1 Oct 2026US 2026/0305196 A1ASM IP Holding B. V.
Most cited
By later US patents
- Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor1,063US 6,287,965 B1Samsung Electronics Co., Ltd. · 2001
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Method for forming metal layer using atomic layer deposition892US 6,174,809 B1Samsung Electronics Co., Ltd. · 2001
- Production of elemental thin films using a boron-containing reducing agent809US 6,475,276 B1ASM Microchemistry Oy · 2002
- Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)717US 6,428,859 B1Angstron Systems, Inc. · 2002