Vapor deposition processes
AssigneeASM IP Holding B. V.
InventorsSean T. Barry, Goran Bacic, Charles Dezelah, Timothee Blanquart, René Henricus Jozef Vervuurt, Peter Gordon
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Abstract
Vapor phase methods of depositing a metal or a semimetal-comprising materials on a substrate are provided. In the methods, various metal or semimetal precursors may be used together with reactants that may generate hydrogen radical or amino radical to react with the metal or semimetal precursor to deposit the metal or semimetal-comprising material on the substrate. Further provided are materials and structures deposited by the disclosed methods, as well as deposition assemblies.
Claims20
A method of depositing a material comprising a metal or a semimetal on a substrate by a cyclic vapor deposition process, the method comprising
- providing a substrate in a reaction chamber;
- providing a first precursor into the reaction chamber in a vapor phase;
- providing a reactant into the reaction chamber in a vapor phase,
- wherein the reactant comprises a compound of formula (II),
- wherein each of R1, R2, R3 and R4 are independently selected from H, linear and branched C1 to C6 alkyl groups and silyl groups, and wherein Z is selected from H and NH2,
- wherein the first precursor is a metal precursor, the reactant releases a reactive radical species and a long-lived radical species, and
- wherein the reactive radical species reacts with the first precursor thereby depositing material comprising the metal or semimetal on the substrate.
Dependencies are inferred from the claim text.