H10P 14/44
Physical vapour deposition [pvd]
Official title: Physical vapour deposition [PVD]
H10P14/44 (Physical vapour deposition [pvd]) appears on 1,411 US grants and 1,513 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,411
- Published applications
- 1,513
- Assignees
- 356
- Inventors
- 2,723
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 3 | 0 |
| 1993 | 4 | 0 |
| 1994 | 3 | 0 |
| 1995 | 2 | 0 |
| 1996 | 6 | 0 |
| 1997 | 6 | 0 |
| 1998 | 17 | 0 |
| 1999 | 15 | 0 |
| 2000 | 41 | 0 |
| 2001 | 47 | 17 |
| 2002 | 64 | 67 |
| 2003 | 53 | 67 |
| 2004 | 60 | 72 |
| 2005 | 46 | 72 |
| 2006 | 41 | 59 |
| 2007 | 35 | 55 |
| 2008 | 35 | 52 |
| 2009 | 31 | 71 |
| 2010 | 60 | 56 |
| 2011 | 40 | 51 |
| 2012 | 48 | 43 |
| 2013 | 44 | 30 |
| 2014 | 37 | 61 |
| 2015 | 51 | 97 |
| 2016 | 76 | 91 |
| 2017 | 81 | 93 |
| 2018 | 82 | 92 |
| 2019 | 90 | 84 |
| 2020 | 58 | 65 |
| 2021 | 58 | 45 |
| 2022 | 43 | 43 |
| 2023 | 31 | 47 |
| 2024 | 41 | 39 |
| 2025 | 31 | 30 |
| 2026 | 21 | 14 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Physical vapor deposition system and methods of operating the same29 Sep 2026US 12,747,492 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof22 Sep 2026US 12,745,422 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method of operating a PVD apparatus22 Sep 2026US 12,745,577 B2SPTS Technologies Limited
- Method for metal gapfill25 Aug 2026US 12,721,122 B2APPLIED Materials.Inc.
- Methods related to dual-sided radio-frequency package with overmold structure25 Aug 2026US 12,721,179 B2Skyworks Solutions, Inc.
- Method of Providing a Multi-layer Adhesion Layer on a Workpiece17 Sep 2026US 2026/0282772 A1
- Seam free molybdenum gap fill10 Sep 2026US 2026/0265906 A1APPLIED Materials.Inc.
- Sputtering apparatus and method of manufacturing semiconductor device20 Aug 2026US 2026/0245836 A1Mitsubishi Electric Corporation
- Monohydride passivation of high resistivity si(111) for quantum information technologies6 Aug 2026US 2026/0231687 A1Northwestern University
- Method for Improving Deposition Process16 Jul 2026US 2026/0204528 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Barrier first method for single damascene trench applications546US 7,186,648 B1Novellus Systems, Inc. · 2007
- Method of using a barrier sputter reactor to remove an underlying barrier layer543US 6,498,091 B1APPLIED Materials.Inc. · 2002
- Device for reducing contact resistance of a metal397US 8,736,056 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Barrier formation using novel sputter deposition method with PVD, CVD, or ALD386US 6,740,585 B2APPLIED Materials.Inc. · 2004
- Step coverage and overhang improvement by pedestal bias voltage modulation330US 5,976,327 AAPPLIED Materials.Inc. · 1999