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US 2026/0265906 A1Published application
Seam free molybdenum gap fill
AssigneeApplied Materials, Inc.
InventorsChanghyun Choi, Kyoung-Ho Bu
Life of this patent
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Abstract
Embodiments of the disclosure relate to methods for molybdenum gap fill. The method includes forming a metal layer on a substrate surface with at least one feature formed therein by physical vapor deposition (PVD). The substrate surface is then exposed to a molybdenum halide precursor to remove a portion of the metal layer. A molybdenum precursor and a reductant are used to form a gap fill layer within the at least one feature.
Claims20
A method of depositing molybdenum gap fill, the method comprising:
- forming a metal layer on a substrate surface with at least one feature formed therein by physical vapor deposition (PVD), the at least one feature having an opening, a sidewall, and extending a depth from a top surface to a bottom surface;
- exposing the substrate surface to a molybdenum halide precursor to remove a portion of the metal layer;
- and
- exposing the substrate surface to a molybdenum precursor and a reductant to form a gap fill layer within the at least one feature.
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A method of depositing molybdenum gap fill, the method comprising:
- forming a molybdenum (Mo) layer on a substrate surface with at least one feature formed therein by physical vapor deposition (PVD), the at least one feature having an opening, a sidewall, and extending a depth from a top surface to a bottom surface, and the at least one feature having an aspect ratio greater than or equal to about 100:1;
- exposing the substrate surface to molybdenum pentachloride (MoCl5) to remove a portion of the molybdenum (Mo) layer;
- and
- exposing the substrate surface to a molybdenum pentachloride (MoCl5) and a hydrogen (H2) to form a gap fill layer within the at least one feature.
1 more element
Dependencies are inferred from the claim text.