Method of Providing a Multi-layer Adhesion Layer on a Workpiece
OwnerGareth Emyr JAMES, Dylan Edward STARESinventors
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Abstract
A semiconductor substrate has a layer of polysilicon located thereon. A first layer of titanium having a thickness in the range of 5 nanometres to 10 nanometres is deposited on the layer of polysilicon. A layer of titanium nitride having a thickness in the range of 10 nanometres to 25 nanometres is deposited on the first layer of titanium. A second layer of titanium having a thickness in the range of 20 nanometres to 30 nanometres is deposited on the layer of titanium nitride.
Claims19
A method of providing a multi-layer adhesion layer on a workpiece comprising a semiconductor substrate, the method comprising:
- providing a semiconductor substrate having a layer of polysilicon located thereon;
- depositing, on the layer of polysilicon, a first layer of titanium having a thickness from 5 nanometres to 10 nanometres;
- depositing, on the first layer of titanium, a layer of titanium nitride having a thickness from 10 nanometres to 25 nanometres;
- and
- depositing, on the layer of titanium nitride, a second layer of titanium having a thickness from 20 nanometres to 30 nanometres.
A PVD system for providing a multi-layer adhesion layer on a workpiece comprising a semiconductor substrate, the system comprising:
- one or more PVD chambers configured to:
- deposit, on a layer of polysilicon located on a semiconductor substrate, a first layer of titanium having a thickness from 5 nanometres to 10 nanometres;
- deposit, on the first layer of titanium, a layer of titanium nitride having a thickness from 10 nanometres to 25 nanometres;
- and
- deposit, on the layer of titanium nitride, a second layer of titanium having a thickness from 20 nanometres to 30 nanometres.
A workpiece having a multi-layer adhesion layer provided thereon, the workpiece comprising:
- a semiconductor substrate having a layer of polysilicon located thereon;
- a first layer of titanium having a thickness from 5 nanometres to 10 nanometres, the first layer of titanium being deposited on the layer of polysilicon;
- a layer of titanium nitride having a thickness from 10 nanometres to 25 nanometres, the layer of titanium nitride being deposited on the first layer of titanium;
- and
- a second layer of titanium having a thickness from 20 nanometres to 30 nanometres, the second layer of titanium being deposited on the layer of titanium nitride.
Dependencies are inferred from the claim text.