Method for metal gapfill
AssigneeApplied Materials, Inc.
InventorsYi Xu, Yu Lei, Aixi Zhang, Bingqian Liu, Zhimin Qi, Wei Lei, Rongjun Wang
Life of this patent
Estimating the term…
Abstract
A method of metal gapfill including depositing a metal layer on a dielectric layer present on a field and/or in an opening of a feature via plasma enhanced atomic layer deposition utilizing a metal halide precursor and a plasma comprising hydrogen and a noble gas; and depositing a metal gapfill material on the field and in the opening directly over the metal layer, wherein the metal gapfill material completely fills the opening.
Claims19
A method for metal gapfill, comprising:
- depositing a metal layer on a dielectric layer present on a field and in an opening of a feature, via plasma enhanced atomic layer deposition utilizing a metal precursor according to formula I:
- MXa;
- (I)
- wherein M is tungsten or cobalt, X is fluorine or chlorine, and a is from 2 to 6, and a plasma comprising hydrogen and a noble gas;
- and
- depositing a metal gapfill material on the field and in the opening directly over the metal layer, wherein the metal gapfill material completely fills the opening;
- and
- wherein the plasma is an argon-hydrogen plasma comprising a mass-to-mass ratio of argon to hydrogen from about 1 to 10, to about 10 to 1.
A method for metal gapfill, comprising:
- deposited a base metal layer via physical vapor deposition or chemical vapor deposition on a portion of a dielectric layer present on a field and in an opening of a feature;
- depositing a conformal metal layer directly on the base metal layer and on a portion of the dielectric layer present on the field and in the opening of the feature via plasma enhanced atomic layer deposition utilizing a metal precursor according to formula I:
- MXa;
- (I)
- wherein M is tungsten or cobalt, X is fluorine or chlorine, and a is from 2 to 6, and an argon-hydrogen plasma;
- and
- depositing a metal gapfill material on the field and in the opening directly over the metal layer, wherein the metal gapfill material completely fills the opening;
- wherein a mass-to-mass ratio of argon to hydrogen in the argon-hydrogen plasma is from about 1 to 10, to about 10 to 1;
- and
- wherein the plasma enhanced atomic layer deposition is conducted at a power of greater than or equal to about 200 watts and less than or equal to about 1600 watts.
A non-transitory, computer readable medium having instructions stored thereon that, when executed, cause a method for metal gapfill to be performed, the method comprising:
- depositing a metal layer on a dielectric layer present on a field and in an opening of a feature, via plasma enhanced atomic layer deposition utilizing a metal precursor according to formula I:
- MXa;
- (I)
- wherein M is tungsten or cobalt, X is fluorine or chlorine, and a is from 2 to 6;
- and a plasma comprising hydrogen and a noble gas;
- and
- depositing a metal gapfill material on the field and in the opening directly over the metal layer, wherein the metal gapfill material completely fills the opening;
- and
- wherein the plasma is an argon-hydrogen plasma comprising a mass-to-mass ratio of argon to hydrogen from about 1 to 10, to about 10 to 1.
Dependencies are inferred from the claim text.