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US 2026/0204528 A1Published application
Method for Improving Deposition Process
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJung-Tang Wu, Szu-Hua Wu, Chin-Szu Lee, Yi-Lin Wang
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Abstract
A method includes placing a wafer on a wafer holder, depositing a film on a front surface of the wafer, and blowing a gas through ports in a redistributor onto a back surface of the wafer at a same time the deposition is performed. The gas is selected from a group consisting of nitrogen (N2), He, Ne, and combinations thereof.
Claims20
A method comprising:
- forming a first conductive layer over a substrate;
- and
- forming a second conductive layer over the first conductive layer, wherein forming the second conductive layer comprises performing a plasma process while simultaneously blowing a first backside gas through openings in a redistributor plate and into a cavity, the cavity exposing a back surface of the substrate, wherein the first backside gas is selected from the group consisting of N2 He, Ne, and combinations thereof, wherein the first backside gas is heated.
A method comprising:
- placing a wafer on a wafer stage in a process chamber;
- depositing a metal layer on a front surface of the wafer;
- and
- flowing a gas through a plurality of outlet ports into a cavity while depositing the metal layer, wherein a back surface of the wafer is exposed to the cavity.
1 more element
A method comprising:
- placing a wafer on a wafer stage in a process chamber;
- and
- forming a TaN layer on the wafer using a first plasma process while simultaneously blowing a first backside gas through openings in a redistributor plate and into a cavity, the cavity exposing a back surface of the wafer, wherein the first backside gas is selected from the group consisting of Ar, N2 He, Ne, and combinations thereof, wherein the first backside gas is heated.
Dependencies are inferred from the claim text.