Step coverage and overhang improvement by pedestal bias voltage modulation
AssigneeApplied Materials, Inc.
InventorYoichiro Tanaka
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Abstract
The invention provides a method for depositing a metal film on a substrate, comprising generating a high density plasma in a chamber, sputtering metal particles from a target to the substrate, and applying a modulated radio frequency (RF) bias to the substrate during deposition. Another aspect of the invention provides an apparatus for depositing a metal film on a substrate comprising a high density plasma physical vapor deposition (HDP PVD) chamber and a controller to modulate a RF bias power applied to a substrate in the chamber.
Claims20
A method for depositing a metal film on a substrate, comprising:
- (a) generating a high density plasma in a chamber;
- (b) sputtering metal from a target onto the substrate;
- and
- (c) applying a radio frequency (RF) bias to the substrate during deposition, the RF bias comprising a first RF bias greater than about 300 W for a first portion of a cycle and a second RF bias less than about 300 W for a second portion of the cycle.
An apparatus for depositing a metal film on a substrate, comprising:
- (a) a high density plasma physical vapor deposition (HDP PVD) chamber;
- and
- (b) a controller which controls a RF bias power applied to a substrate in the chamber between a first RF bias greater than about 300 W for a first portion of a cycle and a second RF bias less than about 300 W for a second portion of the cycle.
The apparatus of 8 wherein the first RF bias is between about 300 W and about 500 W and the second RF bias is between about 100 W and about 300 W.
The apparatus of 8 wherein the first RF bias is about 500 W and the second RF bias is about 200 W.
A method for depositing a metal film on a substrate, comprising:
- (a) moving a substrate into a chamber;
- (b) generating a plasma in the chamber;
- (c) sputtering material from a target;
- and
- (d) applying a radio frequency (RF) bias to the substrate during deposition, the RF bias comprising a first RF bias greater than about 300 W for a first portion of a cycle and a second RF bias less than about 300 W for a second portion of the cycle.
Dependencies are inferred from the claim text.