H10D 84/851
Comprising igfets having stacked nanowire, nanosheet or nanoribbon channels
Official title: {comprising IGFETs having stacked nanowire, nanosheet or nanoribbon channels}
H10D84/851 (Comprising igfets having stacked nanowire, nanosheet or nanoribbon channels) appears on 1,661 US grants and 3,198 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,661
- Published applications
- 3,198
- Assignees
- 95
- Inventors
- 2,585
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2005 | 0 | 1 |
| 2006 | 0 | 0 |
| 2007 | 1 | 0 |
| 2008 | 0 | 2 |
| 2009 | 0 | 0 |
| 2010 | 1 | 3 |
| 2011 | 1 | 0 |
| 2012 | 2 | 2 |
| 2013 | 3 | 7 |
| 2014 | 6 | 7 |
| 2015 | 11 | 19 |
| 2016 | 21 | 28 |
| 2017 | 33 | 40 |
| 2018 | 54 | 50 |
| 2019 | 70 | 96 |
| 2020 | 99 | 169 |
| 2021 | 144 | 262 |
| 2022 | 182 | 358 |
| 2023 | 207 | 492 |
| 2024 | 250 | 579 |
| 2025 | 367 | 580 |
| 2026 | 209 | 503 |
By publication year. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Complementary field effect transistor (CFET) circuits with vertical routing structures6 Oct 2026US 12,757,483 B2QUALCOMM Incorporated
- Method for forming a semiconductor device by recessing semiconductor layers and inner spacers29 Sep 2026US 12,751,079 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including inclined channel layer and electronic device including the semiconductor device1 Sep 2026US 12,727,190 B2Samsung Electronics Co., Ltd.
- Nanosheet channel formation method and structure25 Aug 2026US 12,720,785 B2Taiwan Semicondutor Manufacturing Co.
- Semiconductor device and method of manufacturing same25 Aug 2026US 12,720,786 B2Samsung Electronics Co., Ltd.
- Multigate device and method of fabrication thereof8 Oct 2026US 2026/0313944 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with improved gate structureand methods of fabrication thereof8 Oct 2026US 2026/0314030 A1
- Semiconductor device including cutting pattern8 Oct 2026US 2026/0314057 A1Samsung Electronics Co., Ltd.
- Source/drain contact in stacked nanosheet fets8 Oct 2026US 2026/0314061 A1International Business Machines Corporation
- Semiconductor structure and method of manufacturing the same8 Oct 2026US 2026/0314062 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Strained nanowire CMOS device and method of forming157US 9,853,101 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Stacked complementary FETs featuring vertically stacked horizontal nanowires130US 9,837,414 B1International Business Machines Corporation · 2017
- Spacers for nanowire-based integrated circuit device and method of fabricating same128US 10,475,902 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2019
- Buffer regions for blocking unwanted diffusion in nanosheet transistors76US 10,263,100 B1International Business Machines Corporation · 2019
- Single gate inverter nanowire mesh75US 8,084,308 B2International Business Machines Corporation · 2011