H10D 84/817
Combinations of field-effect devices and resistors only
Official title: {Combinations of field-effect devices and resistors only}
H10D84/817 (Combinations of field-effect devices and resistors only) appears on 888 US grants and 1,000 published applications in this corpus.
Search patents in H10D- Granted patents
- 888
- Published applications
- 1,000
- Assignees
- 239
- Inventors
- 1,738
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 2 | 0 |
| 1978 | 3 | 0 |
| 1979 | 0 | 0 |
| 1980 | 3 | 0 |
| 1981 | 3 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 4 | 0 |
| 1993 | 0 | 0 |
| 1994 | 3 | 0 |
| 1995 | 3 | 0 |
| 1996 | 6 | 0 |
| 1997 | 3 | 0 |
| 1998 | 5 | 0 |
| 1999 | 7 | 0 |
| 2000 | 19 | 0 |
| 2001 | 18 | 10 |
| 2002 | 7 | 15 |
| 2003 | 13 | 13 |
| 2004 | 17 | 25 |
| 2005 | 15 | 23 |
| 2006 | 12 | 29 |
| 2007 | 18 | 32 |
| 2008 | 19 | 32 |
| 2009 | 16 | 16 |
| 2010 | 20 | 47 |
| 2011 | 33 | 44 |
| 2012 | 32 | 29 |
| 2013 | 40 | 66 |
| 2014 | 57 | 54 |
| 2015 | 57 | 67 |
| 2016 | 67 | 50 |
| 2017 | 46 | 36 |
| 2018 | 40 | 51 |
| 2019 | 51 | 50 |
| 2020 | 41 | 46 |
| 2021 | 36 | 43 |
| 2022 | 34 | 42 |
| 2023 | 38 | 54 |
| 2024 | 43 | 36 |
| 2025 | 36 | 47 |
| 2026 | 13 | 43 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Current sensing in power semiconductor devices22 Sep 2026US 12,745,449 B2Cambridge Gan Devices Limited
- Fin field-effect transistor, ESD protection circuit, filter circuit, and electronic device22 Sep 2026US 12,745,466 B2Huawei Technologies Co., Ltd.
- Three-dimensional integrated circuit resistors18 Aug 2026US 12,713,631 B2Murata Manufacturing Co., Ltd.
- Semiconductor structure and method for forming same11 Aug 2026US 12,707,708 B2Semiconductor Manufacturing International (Shanghai) Corporation
- Integrated circuit device having active region coupled to conductive patterns on opposite sides of substrate11 Aug 2026US 12,707,999 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor switch with degradation detection8 Oct 2026US 2026/0309774 A1Infineon Technologies AG
- Semiconductor die with a vertical transistor device13 Aug 2026US 2026/0239668 A1Infineon Technologies Austria AG
- Voltage-tunable polysilicon resistor and operation method thereof23 Jul 2026US 2026/0214971 A1Winbond Electronics Corp.
- Semiconductor device23 Jul 2026US 2026/0214973 A1Samsung Electronics Co., Ltd.
- Differential pair structure23 Jul 2026US 2026/0214982 A1ASMedia Technology Inc.
Most cited
By later US patents
- Semiconductor devices with improved local matching and end resistance of RX based resistors118US 8,183,107 B2Globalfoundries Inc. · 2012
- Schottky barrier MOSFET systems and fabrication thereof94US 5,663,584 A1997
- Integrated circuit trench cell93US 4,890,144 AMotorola, Inc. · 1989
- Apparatus, methods, and articles of manufacture for a switch having sharpened control voltage89US 6,803,680 B2MIA-Com, Inc. · 2004
- Three-dimensional memory device having passive devices at a buried source line level and method of making thereof86US 9,876,031 B1SanDisk Technologies LLC · 2018