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US 2026/0214973 A1Published application
Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsSanghyun Kim, In Jun Hwang
Life of this patent
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Abstract
A semiconductor device includes a substrate, a channel layer on the substrate, a barrier layer on the channel layer, a gate electrode on the barrier layer, a source electrode and a drain electrode on opposite lateral sides of the gate electrode and electrically connected to the channel layer, a gate runner, a gate pad, and a resistor in the channel layer, wherein the resistor is electrically connected between the gate pad and the gate runner, or between the gate runner and the gate electrode.
Claims20
A semiconductor device comprising:
- a substrate;
- a channel layer on the substrate;
- a barrier layer on the channel layer;
- a gate electrode on the barrier layer;
- a source electrode and a drain electrode on opposite lateral sides of the gate electrode and electrically connected to the channel layer;
- a gate runner;
- a gate pad;
- and
- a resistor in the channel layer, wherein the resistor is electrically connected between the gate pad and the gate runner, or between the gate runner and the gate electrode.
6 more elements
A semiconductor device comprising:
- a substrate;
- a channel layer on the substrate;
- a barrier layer on the channel layer;
- a gate electrode on the barrier layer;
- a source electrode and drain electrode on opposite lateral sides of the gate electrode and electrically connected to the channel layer;
- a gate runner;
- a gate pad;
- and
- at least one resistor comprising a two-dimensional electron gas, wherein the two-dimensional electron gas is in the channel layer, and
- wherein the at least one resistor is electrically connected between:
- (i) the gate pad and the gate runner,
- (ii) the gate runner and the gate electrode, or
- (i) and (ii).
10 more elements
A semiconductor device comprising:
- a substrate;
- a high electron mobility transistor on the substrate;
- a connection wiring on the high electron mobility transistor;
- a gate runner electrically connected to the high electron mobility transistor through the connection wiring;
- a gate pad electrically connected to the high electron mobility transistor through the gate runner;
- and
- a resistor electrically connected between the gate pad and the gate runner, or between the gate runner and the high electron mobility transistor,
- wherein the high electron mobility transistor includes:
- a channel layer on the substrate,
- a barrier layer on the channel layer,
- a gate electrode on the barrier layer, and
- a source electrode and a drain electrode on opposite lateral sides of the gate electrode and electrically connected to the channel layer,
- wherein the resistor is in the channel layer.
10 more elements
Dependencies are inferred from the claim text.