Voltage-tunable polysilicon resistor and operation method thereof
AssigneeWinbond Electronics Corp.
InventorsChao-Lung Wang, Kuan-Yu Lin
Life of this patent
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Abstract
Provided is a voltage-tunable polysilicon resistor, which includes a semiconductor substrate, a device isolation structure, at least one polysilicon resistor structure, a polysilicon control layer and a dielectric layer. The device isolation structure is disposed in the semiconductor substrate to define an active region. The polysilicon resistor structure is disposed on the active region. The polysilicon control layer is disposed on the polysilicon resistor structure, and the polysilicon control layer is coupled to a control voltage source to modulate a resistance value of the polysilicon resistor structure. The dielectric layer is disposed between the polysilicon control layer and the polysilicon resistor structure.
Claims11
A voltage-tunable polysilicon resistor, comprising:
- a semiconductor substrate;
- a device isolation structure, disposed in the semiconductor substrate, to define an active region;
- at least one polysilicon resistor structure, disposed on the active region;
- a polysilicon control layer, disposed on the at least one polysilicon resistor structure, and coupled to a control voltage source to modulate a resistance value of the at least one polysilicon resistor structure;
- and
- a dielectric layer, disposed between the polysilicon control layer and the at least one polysilicon resistor structure.
An operation method of a voltage-tunable polysilicon resistor, wherein the voltage-tunable polysilicon resistor comprises a semiconductor substrate having a device isolation structure and an active region defined by the device isolation structure, a polysilicon resistor structure disposed on the active region, a dielectric layer disposed on the polysilicon resistor structure, and a polysilicon control layer disposed on the dielectric layer and covering the polysilicon resistor structure, and the operation method comprises:
- coupling a first end of the polysilicon resistor structure to a first node;
- coupling a second end of the polysilicon resistor structure to a second node;
- and
- applying a control voltage to the polysilicon control layer to modulate a resistance value of the polysilicon resistor structure.
Dependencies are inferred from the claim text.