Three-dimensional integrated circuit resistors
AssigneeMurata Manufacturing Co., Ltd.
InventorsJarred Moore, Sinan Goktepeli
Life of this patent
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Abstract
Compact polysilicon resistor structures, particularly for RF ICs, and methods of fabricating such structures. Embodiments include three-dimensional (3-D) IC structures that include a 3-D resistor configuration comprising disjointed polysilicon segments spaced by at least one IC substrate and connected by one or more conductive through-substrate vias (TSVs). Compared to the prior art, embodiments of the present invention provide a reduction in IC area required for a polysilicon resistor and result in the same performance while maintaining low parasitic capacitance. For example, by taking advantage of the substrate cross-sectional height, embodiments of the invention can achieve the same resistive performance while reducing area allocation by more than 30%.
Claims14
A three-dimensional integrated circuit structure including at least two disjointed polysilicon resistor segments spaced by a pair of bonded integrated circuit substrates and electrically connected by at least one through-substrate via.
A three-dimensional integrated circuit structure comprising:
- a pair of integrated circuit substrates comprising a first integrated circuit substrate and a second integrated circuit substrate, each of the integrated circuit substrates having a front-side including a substructure and a backside, the pair of integrated circuit substrates being bonded at their respective backsides;
- wherein
- a plurality of disjointed polysilicon resistor segments comprising a first polysilicon resistor segment disposed on a front-side of the first integrated circuit substrate and a second polysilicon resistor segment disposed on a front-side of the second integrated circuit substrate, and
- at least one through-substrate via electrically connected between the first polysilicon resistor segment and the second polysilicon resistor segment.
Dependencies are inferred from the claim text.