Semiconductor structure and method for forming same
AssigneeSemiconductor Manufacturing International (Shanghai) Corporation
InventorsJisong Jin, Zhankui Zhu
Life of this patent
Estimating the term…
Abstract
Semiconductor structures and methods for forming the same are provided. In one form, a semiconductor structure includes: a substrate; a first dielectric layer, located on the substrate; a trench, located in the first dielectric layer; a conductive layer, located on a bottom and a sidewall of the trench and configured as a resistor structure; and a second dielectric layer, configured to be filled in the trench where the conductive layer is formed. By means of embodiments and implementations of the present disclosure, an equivalent conductive sectional area of the resistor structure is increased, and a transverse area occupied by the resistor structure is reduced, thereby miniaturizing the device.
Claims7
A semiconductor structure, comprising:
- a substrate comprising a device region configured to form a transistor and a resistor region configured to form the resistor structure;
- a first dielectric layer, located on the substrate;
- a trench, located in the first dielectric layer;
- a conductive layer, located on a bottom and a sidewall of the trench and configured as a resistor structure;
- a second dielectric layer, configured to be filled in the trench where the conductive layer is formed;
- a channel structure, located on the substrate of the device region;
- an isolation layer, located on the substrate and surrounding the channel structure;
- and
- an interlayer dielectric layer, located on the isolation layer, wherein the interlayer dielectric layer and the isolation layer are configured as a first dielectric layer.
Dependencies are inferred from the claim text.