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US 8,183,107 B2Granted
Semiconductor devices with improved local matching and end resistance of RX based resistors
AssigneeGlobalfoundries Inc.
InventorsKaveri Mathur, James F. Buller, Andreas Kurz
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Abstract
Semiconductor devices are formed with reduced variability between close proximity resistors, improved end resistances, and reduced random dopant mismatch. Embodiments include ion implanting a dopant, such as B, at a relatively high dosage, e.g. about 4 to about 6 keV, and at a relatively low implant energy, e.g., about 1.5 to about 2E15/cm2.
Claims8
A method comprising:
- forming a high-K gate dielectric layer on a substrate;
- forming a metal gate electrode on the high-K gate dielectric layer;
- forming an amorphous silicon layer on the metal gate electrode with a thickness less than 800 Å;
- forming source/drain regions in the substrate adjacent opposite sides of the high-K dielectric layer, metal gate electrode, and amorphous silicon layer;
- defining resistive structures in portions of the source/drain regions, each resistive structure comprising a first edge and a second edge opposite the first edge;
- and
- introducing a dopant into the resistive structures by introducing a dopant into the portions of the source/drain regions in the substrate at an energy less than 8 keV and at a dosage greater than or equal to 1.5E15/cm2.
4 more elements
A method of fabricating a semiconductor device, the method comprising:
- forming a high-K gate dielectric layer on a silicon or SOI substrate;
- forming a metal gate electrode, having first and second side surfaces, on the high-K gate dielectric layer;
- forming an amorphous silicon layer on the metal gate electrode with a thickness less than 800 Å;
- forming active regions in the substrate adjacent the first and second side surfaces of the metal gate electrode;
- defining resistive structures on portions of the active regions, each resistive structure comprising a first edge and a second edge opposite the first edge;
- introducing a B dopant into the resistive structures at an energy of about 4 to 6 keV and at a dosage of about 1.5 to 2E15/cm2;
- forming a silicide block over a center portion of each resistive structure;
- forming a silicide on the remainder of the resistive structures;
- forming a dielectric layer on the resistive structures;
- and
- forming metal contacts through the dielectric layer near the first and second edges of resistive structures.
8 more elements
Dependencies are inferred from the claim text.