Fin field-effect transistor, ESD protection circuit, filter circuit, and electronic device

A fin field-effect transistor (FinFET), comprising:

• a gate terminal;
• a source terminal;
• a drain terminal;
• a resistor potential terminal;
• valid gates coupled to the gate terminal;
• fins arranged in parallel to each other, extending in a first direction, and comprising:
• first fins disposed on a first side of the valid gates and coupled to the source terminal;
• and
• second fins disposed on a second side of the valid gates and coupled to the drain terminal;
• and
• a first dummy polycrystalline silicon layer located on the first side of the valid gates,
• wherein the valid gates and the first dummy polycrystalline silicon layer extend in a second direction and cover surfaces of the fins,
• wherein the first dummy polycrystalline silicon layer is coupled to and disposed between the gate terminal and the resistor potential terminal;
• a second dummy polycrystalline silicon layer located on the first second side of the valid gates, a first dummy gate located between the first dummy polycrystalline silicon layer and the valid gates;
• and
• a second dummy gate located between the second dummy polycrystalline silicon layer and the valid gates, wherein the first dummy gate and the second dummy gate are suspended.