H10D 84/0186
Manufacturing their interconnections or electrodes
Official title: {Manufacturing their interconnections or electrodes, e.g. source or drain electrodes}
H10D84/0186 (Manufacturing their interconnections or electrodes) appears on 2,897 US grants and 4,004 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,897
- Published applications
- 4,004
- Assignees
- 291
- Inventors
- 4,001
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 3 | 0 |
| 1985 | 3 | 0 |
| 1986 | 0 | 0 |
| 1987 | 4 | 0 |
| 1988 | 4 | 0 |
| 1989 | 3 | 0 |
| 1990 | 1 | 0 |
| 1991 | 3 | 0 |
| 1992 | 5 | 0 |
| 1993 | 6 | 0 |
| 1994 | 4 | 0 |
| 1995 | 5 | 0 |
| 1996 | 7 | 0 |
| 1997 | 9 | 0 |
| 1998 | 8 | 0 |
| 1999 | 12 | 0 |
| 2000 | 7 | 0 |
| 2001 | 9 | 7 |
| 2002 | 15 | 21 |
| 2003 | 20 | 18 |
| 2004 | 15 | 18 |
| 2005 | 13 | 29 |
| 2006 | 17 | 27 |
| 2007 | 19 | 40 |
| 2008 | 21 | 52 |
| 2009 | 25 | 49 |
| 2010 | 36 | 104 |
| 2011 | 65 | 41 |
| 2012 | 79 | 59 |
| 2013 | 53 | 72 |
| 2014 | 68 | 65 |
| 2015 | 71 | 93 |
| 2016 | 123 | 138 |
| 2017 | 146 | 149 |
| 2018 | 167 | 187 |
| 2019 | 171 | 199 |
| 2020 | 205 | 261 |
| 2021 | 201 | 286 |
| 2022 | 243 | 360 |
| 2023 | 236 | 448 |
| 2024 | 284 | 475 |
| 2025 | 300 | 490 |
| 2026 | 205 | 316 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device structure with butted-contact and methods of forming the same6 Oct 2026US 12,757,433 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit device6 Oct 2026US 12,757,482 B2Samsung Electronics Co., Ltd.
- Complementary field effect transistor (CFET) circuits with vertical routing structures6 Oct 2026US 12,757,483 B2QUALCOMM Incorporated
- 3D-stacked semiconductor device including middle isolation structure and BSPDN structure6 Oct 2026US 12,757,485 B2Samsung Electronics Co., Ltd.
- Source and drain regions for laterally adjacent gate-all-around (GAA) PMOS and NMOS29 Sep 2026US 12,751,074 B2Intel Corporation
- FINFET Devices with Backside Power Rail and Backside Self-Aligned Via8 Oct 2026US 2026/0313945 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure including bottom isolation and method for manufacturing the same8 Oct 2026US 2026/0313965 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and manufacturing method thereof8 Oct 2026US 2026/0313988 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of forming semiconductor device8 Oct 2026US 2026/0314034 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Contact resistance reduction for direct backside contact8 Oct 2026US 2026/0314036 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Method for tuning the effective work function of a gate structure in a semiconductor device419US 9,076,726 B2Imec · 2015
- Multilevel integrated circuits employing fused oxide layers334US 4,829,018 A1989
- Semiconductor wafer with well contacts on back side319US 6,864,156 B1Xilinx, Inc. · 2005
- Semiconductor device277US 8,044,464 B2Semiconductor Energy Laboratory Co.Ltd. · 2011
- Method for producing patterning alignment marks in oxide269US 5,478,762 ATaiwan Semiconductor Manufacturing Company.Ltd · 1995