Integrated circuit device

An integrated circuit device comprising:

• a first fin-type active region on a first area of a substrate;
• a first channel region on the first fin-type active region;
• a first source/drain region that is on the first fin-type active region and contacts the first channel region;
• a first gate line on the first channel region;
• a first insulating structure on the first source/drain region;
• a first contact structure that extends through the first insulating structure and contacts the first source/drain region, wherein the first contact structure comprises a first length in a vertical direction;
• a second fin-type active region on a second area of the substrate;
• a second channel region on the second fin-type active region;
• a second source/drain region that is on the second fin-type active region and contacts the second channel region;
• a second gate line on the second channel region;
• a second insulating structure on the second source/drain region;
• and
• a second contact structure that extends through the second insulating structure and contacts the second source/drain region, the second contact structure comprising a second length in the vertical direction, wherein the second length is greater than the first length of the first contact structure,
• wherein the first contact structure extends toward the substrate and beyond an uppermost surface of the first channel region by a first vertical distance,
• the second contact structure extends toward the substrate and beyond an uppermost surface of the second channel region by a second vertical distance, wherein the second vertical distance is greater than the first vertical distance, and
• the second contact structure comprises a nonlinear-shaped portion that faces the second channel region in a horizontal direction, and the nonlinear-shaped portion comprising a plurality of local protrusions that extend toward the second gate line.

An integrated circuit device comprising:

• a first fin-type active region on a substrate;
• a first channel region on the first fin-type active region;
• a first gate line on the first channel region;
• a first source/drain region on the first fin-type active region and that contacts the first channel region;
• a first contact structure that contacts the first source/drain region and comprises a first length in a vertical direction, wherein the first contact structure extends from above the first source/drain region and beyond an uppermost surface of the first channel region by a first vertical distance;
• a second fin-type active region on the substrate;
• a second channel region on the second fin-type active region and comprising a plurality of nanosheets spaced apart from each other in the vertical direction;
• a second gate line on the plurality of nanosheets;
• a second source/drain region that is on the second fin-type active region and contacts the plurality of nanosheets, the second source/drain region comprising a plurality of protrusions that are convex toward the second gate line;
• and
• a second contact structure that contacts the second source/drain region and comprising a second length in the vertical direction, wherein the second contact structure extends from above the second source/drain region and beyond an uppermost surface of the second channel region by a second vertical distance,
• wherein the second length is greater than the first length,
• wherein the second vertical distance is greater than the first vertical distance, and
• wherein the second contact structure comprises a non-linear shaped portion that faces the second channel region and comprises a plurality of local protrusions that extend outwardly in a horizontal direction.