US 8,044,464 B2 · Semiconductor device

Abstract

An object is to realize high performance and low power consumption in a semiconductor device having an SOI structure. In addition, another object is to provide a semiconductor device having a high performance semiconductor element which is more highly integrated. A semiconductor device is such that a plurality of n-channel field-effect transistors and p-channel field-effect transistors are stacked with an interlayer insulating layer interposed therebetween over a substrate having an insulating surface. By controlling a distortion caused to a semiconductor layer due to an insulating film having a stress, a plane orientation of the semiconductor layer, and a crystal axis in a channel length direction, difference in mobility between the n-channel field-effect transistor and the p-channel field-effect transistor can be reduced, whereby current driving capabilities and response speeds of the n-channel field-effect transistor and the p-channel field-effect can be comparable.

Claims27

Dependent claims

A semiconductor device comprising:

a substrate having an insulating surface;
a first transistor having a first semiconductor layer, a first gate insulating layer and a first gate electrode layer, over the substrate having the insulating surface;
a first insulating film which covers the first transistor;
an interlayer insulating layer over the first insulating film;
a second transistor having a second semiconductor layer, a second gate insulating layer and a second gate electrode layer, over the interlayer insulating layer;
and
a second insulating film which covers the second transistor,
wherein the first semiconductor layer is bonded to the substrate having the insulating surface with a first insulating layer,
wherein the second semiconductor layer is bonded to the interlayer insulating layer with a second insulating layer,
wherein the first transistor is an n-channel transistor and the second transistor is a p-channel transistor, and
wherein the second insulating film has a compressive stress, and a channel formation region of the second semiconductor layer is distorted due to the compressive stress of the second insulating film.

8 more elements

A semiconductor device comprising:

a substrate having an insulating surface;
a first semiconductor layer over the substrate having the insulating surface;
a first gate insulating layer over the first semiconductor layer;
a first gate electrode layer over the first gate insulating layer;
a first insulating film over the first insulating layer and the first gate electrode;
an interlayer insulating layer over the first insulating film;
a second semiconductor layer over the interlayer insulating layer;
a second gate insulating layer over the second semiconductor layer;
a second gate electrode layer over the second gate insulating layer;
and
a second insulating film over the second gate insulating layer and the second gate electrode,
wherein the first semiconductor layer is bonded to the substrate having the insulating surface with a first insulating layer,
wherein the second semiconductor layer is bonded to the interlayer insulating layer with a second insulating layer,
wherein the first semiconductor layer comprises n-type impurities and the second semiconductor layer comprises p-type impurities, and
wherein the second insulating film has a compressive stress, and a channel formation region of the second semiconductor layer is distorted due to the compressive stress of the second insulating film.

12 more elements

A semiconductor device comprising:

a substrate having an insulating surface;
a first semiconductor layer over the substrate having the insulating surface;
a first gate insulating layer over the first semiconductor layer;
a first gate electrode layer over the first gate insulating layer;
a first insulating film over the first insulating layer and the first gate electrode;
an interlayer insulating layer over the first insulating film;
a second semiconductor layer over the interlayer insulating layer;
a second gate insulating layer over the second semiconductor layer;
a second gate electrode layer over the second gate insulating layer;
and
a second insulating film over the second gate insulating layer and the second gate electrode,
wherein the first semiconductor layer is bonded to the substrate having the insulating surface with a first insulating layer,
wherein the second semiconductor layer is bonded to the interlayer insulating layer with a second insulating layer,
wherein the first semiconductor layer comprises p-type impurities and the second semiconductor layer comprises n-type impurities, and
wherein the first insulating film has a compressive stress, and a channel formation region of the first semiconductor layer is distorted due to the compressive stress of the first insulating film.

12 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims27