Contact resistance reduction for direct backside contact
AssigneeApplied Materials, Inc.
InventorsJae Young Lee, Johannes M. Van Meer, Yan Zhang, Naushad K. Variam
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Abstract
Disclosed herein are methods for direct backside contact formation. In some embodiments, a method may include providing a stack of layers defining a front side and a backside, wherein the front side comprises one or more devices, and forming a plurality of vias in the backside, wherein each via of the plurality of vias extends to a source/drain. The method may further include performing a dopant implant to the backside including into the plurality of vias, forming a silicide region within each of the source/drains, and forming a backside contact within each of the plurality of vias, wherein the backside contact is formed over the silicide region.
Claims20
A method for backside contact formation, comprising:
- providing a stack of layers defining a front side and a backside, wherein the front side comprises one or more devices;
- forming a plurality of vias in the backside, wherein each via of the plurality of vias extends to a respective source/drain of a plurality of source/drains;
- performing a dopant implant into the backside, including into the plurality of vias;
- forming a silicide region within each of the plurality of source/drains;
- and
- forming a backside contact within each of the plurality of vias, wherein the backside contact is formed over the silicide region.
A method of dopant activation for backside contacts, comprising:
- providing a stack of layers comprising a source/drain, wherein the stack of layers defines a front side and a backside;
- forming a via in the backside, wherein the via extends to the source/drain;
- delivering a dopant into the via, wherein the dopant impacts an exposed surface of the source/drain;
- forming a silicide region along the source/drain;
- and
- forming a backside contact within the via, wherein the backside contact is formed over the silicide region.
A method of forming backside via landings on a source/drain, comprising:
- providing a stack of layers comprising a source/drain, wherein the stack of layers defines a front side and a backside;
- forming a via in the backside, wherein the via extends to the source/drain;
- delivering a dopant into the via, wherein the dopant impacts an exposed surface of the source/drain;
- forming a silicide region along the exposed surface of the source/drain;
- and
- forming a backside contact within the via, wherein the backside contact is formed over the silicide region.
Dependencies are inferred from the claim text.