H10D 62/119
Nanowire, nanosheet or nanotube semiconductor bodies
Official title: {Nanowire, nanosheet or nanotube semiconductor bodies}
H10D62/119 (Nanowire, nanosheet or nanotube semiconductor bodies) appears on 8,398 US grants and 13,286 published applications in this corpus.
Search patents in H10D- Granted patents
- 8,398
- Published applications
- 13,286
- Assignees
- 809
- Inventors
- 8,643
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 2 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 1 |
| 2002 | 2 | 5 |
| 2003 | 2 | 8 |
| 2004 | 8 | 26 |
| 2005 | 15 | 65 |
| 2006 | 27 | 75 |
| 2007 | 38 | 118 |
| 2008 | 49 | 142 |
| 2009 | 75 | 134 |
| 2010 | 119 | 167 |
| 2011 | 135 | 155 |
| 2012 | 139 | 152 |
| 2013 | 158 | 162 |
| 2014 | 189 | 269 |
| 2015 | 230 | 335 |
| 2016 | 354 | 383 |
| 2017 | 419 | 443 |
| 2018 | 414 | 450 |
| 2019 | 489 | 511 |
| 2020 | 528 | 731 |
| 2021 | 571 | 824 |
| 2022 | 700 | 1237 |
| 2023 | 705 | 1686 |
| 2024 | 908 | 1837 |
| 2025 | 1202 | 2164 |
| 2026 | 918 | 1206 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Selective deposition of gate dielectric layer of semiconductor device and the semiconductor device manufactured thereby6 Oct 2026US 12,757,424 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method for forming the same6 Oct 2026US 12,757,440 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Contact formation with staggered gate patterning6 Oct 2026US 12,757,441 B2International Business Machines Corporation
- Semiconductor device6 Oct 2026US 12,757,443 B2Samsung Electronics Co., Ltd.
- Co-integration of S/D metal contact cut and wrap-around-contact6 Oct 2026US 12,757,445 B2International Business Machines Corporation
- Semiconductor structure and method for manufacturing the same8 Oct 2026US 2026/0313867 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0313928 A1National Taiwan University
- Semiconductor structure and method for forming the same8 Oct 2026US 2026/0313940 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacturing same8 Oct 2026US 2026/0313941 A1Samsung Electronics Co., Ltd.
- Multigate device and method of fabrication thereof8 Oct 2026US 2026/0313944 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- FINFETs with wrap-around silicide and method forming the same1,436US 9,608,116 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Vertical gate all around (VGAA) transistors and methods of forming the same1,029US 9,502,265 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Vertical gate all around (VGAA) devices and methods of manufacturing the same987US 9,536,738 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Methods and devices for fabricating and assembling printable semiconductor elements883US 7,622,367 B1The Board of Trustees of the University of Illinois · 2009
- Self-aligned wrapped-around structure876US 9,209,247 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015