H10D 62/121
Oriented parallel to substrates
Official title: {oriented parallel to substrates}
H10D62/121 (Oriented parallel to substrates) appears on 7,322 US grants and 12,068 published applications in this corpus.
Search patents in H10D- Granted patents
- 7,322
- Published applications
- 12,068
- Assignees
- 635
- Inventors
- 7,567
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 1 |
| 2002 | 2 | 4 |
| 2003 | 2 | 7 |
| 2004 | 7 | 23 |
| 2005 | 15 | 65 |
| 2006 | 27 | 73 |
| 2007 | 36 | 111 |
| 2008 | 46 | 131 |
| 2009 | 73 | 126 |
| 2010 | 112 | 153 |
| 2011 | 125 | 124 |
| 2012 | 121 | 107 |
| 2013 | 127 | 109 |
| 2014 | 138 | 182 |
| 2015 | 155 | 213 |
| 2016 | 248 | 251 |
| 2017 | 290 | 331 |
| 2018 | 297 | 344 |
| 2019 | 378 | 418 |
| 2020 | 420 | 616 |
| 2021 | 503 | 746 |
| 2022 | 622 | 1176 |
| 2023 | 650 | 1628 |
| 2024 | 864 | 1807 |
| 2025 | 1166 | 2132 |
| 2026 | 895 | 1190 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Selective deposition of gate dielectric layer of semiconductor device and the semiconductor device manufactured thereby6 Oct 2026US 12,757,424 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method for forming the same6 Oct 2026US 12,757,440 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Contact formation with staggered gate patterning6 Oct 2026US 12,757,441 B2International Business Machines Corporation
- Semiconductor device6 Oct 2026US 12,757,443 B2Samsung Electronics Co., Ltd.
- Co-integration of S/D metal contact cut and wrap-around-contact6 Oct 2026US 12,757,445 B2International Business Machines Corporation
- Semiconductor structure and method for manufacturing the same8 Oct 2026US 2026/0313867 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0313928 A1National Taiwan University
- Semiconductor structure and method for forming the same8 Oct 2026US 2026/0313940 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacturing same8 Oct 2026US 2026/0313941 A1Samsung Electronics Co., Ltd.
- Multigate device and method of fabrication thereof8 Oct 2026US 2026/0313944 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- FINFETs with wrap-around silicide and method forming the same1,436US 9,608,116 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Methods and devices for fabricating and assembling printable semiconductor elements883US 7,622,367 B1The Board of Trustees of the University of Illinois · 2009
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Stretchable semiconductor elements and stretchable electrical circuits765US 7,557,367 B2The Board of Trustees of the University of Illinois · 2009
- Stretchable form of single crystal silicon for high performance electronics on rubber substrates525US 7,521,292 B2The Board of Trustees of the University of Illinois · 2009