H10D 62/123
Comprising junctions
Official title: {comprising junctions}
H10D62/123 (Comprising junctions) appears on 396 US grants and 459 published applications in this corpus.
Search patents in H10D- Granted patents
- 396
- Published applications
- 459
- Assignees
- 138
- Inventors
- 665
- Latest grant
- 2 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 0 | 3 |
| 2003 | 0 | 2 |
| 2004 | 1 | 5 |
| 2005 | 2 | 16 |
| 2006 | 7 | 12 |
| 2007 | 8 | 23 |
| 2008 | 13 | 21 |
| 2009 | 9 | 23 |
| 2010 | 21 | 30 |
| 2011 | 25 | 27 |
| 2012 | 31 | 18 |
| 2013 | 14 | 19 |
| 2014 | 27 | 27 |
| 2015 | 23 | 37 |
| 2016 | 37 | 34 |
| 2017 | 36 | 38 |
| 2018 | 22 | 26 |
| 2019 | 31 | 22 |
| 2020 | 27 | 24 |
| 2021 | 22 | 19 |
| 2022 | 10 | 7 |
| 2023 | 11 | 11 |
| 2024 | 9 | 6 |
| 2025 | 8 | 8 |
| 2026 | 2 | 1 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Method for manufacture of nanostructure electrical devices2 Jun 2026US 12,648,196 B2University of Copenhagen
- Semiconductor devices3 Feb 2026US 12,543,346 B2Samsung Electronics Co., Ltd.
- Semiconductor device and manufacturing method thereof18 Nov 2025US 12,477,794 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device11 Nov 2025US 12,471,361 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Formation of a semiconductor device with a gate containing a metal oxide layer using an oxidation process4 Nov 2025US 12,464,773 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor diode structure and method for forming the same21 May 2026US 2026/0143820 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device structure with metal gate27 Nov 2025US 2025/0366056 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device27 Nov 2025US 2025/0366188 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices with asymmetric source/drain design20 Nov 2025US 2025/0359229 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Gate all around device with fully-depleted silicon-on-insulator13 Nov 2025US 2025/0351452 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Methods and devices for fabricating and assembling printable semiconductor elements883US 7,622,367 B1The Board of Trustees of the University of Illinois · 2009
- Stretchable semiconductor elements and stretchable electrical circuits765US 7,557,367 B2The Board of Trustees of the University of Illinois · 2009
- Stretchable form of single crystal silicon for high performance electronics on rubber substrates525US 7,521,292 B2The Board of Trustees of the University of Illinois · 2009
- Printable semiconductor structures and related methods of making and assembling422US 7,799,699 B2The Board of Trustees of the University of Illinois · 2010
- Nanowires, nanostructures and devices fabricated therefrom394US 6,882,051 B2The Regents of the University of California · 2005