Method for manufacture of nanostructure electrical devices

A method for manufacturing a substrate for epitaxial growth of crystalline nanostructures, the method comprising the steps of:

• depositing one or more layers of an epitaxial growth condition compatible dielectric material in a predefined pattern on an unetched surface of an epitaxial growth compatible substrate to create a predefined etch pattern of said epitaxial growth condition compatible dielectric material, the epitaxial growth condition compatible dielectric material being distinct from the epitaxial growth compatible substrate;
• selectively etching a region of the unetched surface around said etch pattern, thereby creating a space between the epitaxial growth condition compatible dielectric material and an etched surface of the region, so as to provide at least one under-etched platform comprising the one or more layers of the epitaxial growth condition compatible dielectric material that is vertically raised from the etched surface;
• and
• depositing at least one electrically conducting layer on top of the platform such that the electrically conducting layer is electrically isolated from the etched surface,
• wherein a vertical offset between the unetched surface and the etched surface is at least 100 nm.