Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYan-Ting Lin, Chien-I Kuo, Chii-Horng Li, Yee-Chia Yeo
Life of this patent
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Abstract
A method includes forming a plurality of channel layers above a (110)-orientated substrate, the channel layers arranged in a <110> direction normal to a top surface the (110)-orientated substrate and extending in a <110> direction perpendicular to the <110> direction; epitaxial growing a plurality of silicon layers on either side of each of the channel layers; doping the silicon layers with boron; epitaxial growing a plurality of first silicon germanium layers on the silicon layers; forming a gate structure surrounding each of the channel layers.
Claims20
A method, comprising:
- forming a plurality of channel layers above a (110)-orientated substrate, the channel layers arranged in a <110> direction normal to a top surface of the (110)-orientated substrate and extending in a <110> direction perpendicular to the <110> direction;
- epitaxial growing a plurality of silicon layers on either side of each of the channel layers;
- doping the silicon layers with boron;
- epitaxial growing a plurality of first silicon germanium layers on the silicon layers;
- forming a gate structure surrounding each of the channel layers;
- and
- epitaxial growing a plurality of second silicon germanium layers on the first silicon germanium layers, the second silicon germanium layers having a higher germanium atomic concentration than the first silicon germanium layers.
A method, comprising:
- forming a multi-layer stack including alternating a plurality of channel layers and a plurality of sacrificial layers stacked in a vertical direction on a silicon substrate having a (110) surface orientation;
- forming a plurality of inner spacers on either side of each of the sacrificial layers;
- forming a plurality of epitaxial buffer layers on either side of each of the channel layers, wherein one of the epitaxial buffer layers has a notched corner, and a corresponding one of the inner spacers is inlaid in the notched corner;
- doping the epitaxial buffer layers with a dopant;
- forming a plurality of epitaxial source/drain regions on the epitaxial buffer layers, wherein each of the epitaxial source/drain regions is on three sides of a corresponding one of the epitaxial buffer layers and is made of a different material than the epitaxial buffer layers;
- and
- replacing the sacrificial layers with a gate structure.
A method for forming a semiconductor device, comprising:
- forming a plurality of channel layers above a (110)-orientated substrate, the channel layers extending in a <110> direction on the (110)-orientated substrate and arranged in a vertical direction, wherein end surfaces of the channel layers are concave;
- forming a gate structure surrounding each of the channel layers;
- forming a plurality of source/drain structures on either side of the gate structure;
- forming a plurality of inner spacers interposing the gate structure and the source/drain structures;
- and
- forming a plurality of silicon buffer layers interposing the channel layers and the source/drain structures, the silicon buffer layers each having two horizontal side surfaces and a vertical side surface between the two horizontal side surfaces from a cross sectional view.
Dependencies are inferred from the claim text.