Gate all around device with fully-depleted silicon-on-insulator
AssigneeApplied Materials, Inc.
InventorsAshish Pal, El Mehdi Bazizi, Benjamin Colombeau, Myungsun Kim
Life of this patent
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Abstract
Horizontal gate-all-around devices and methods of manufacturing are described. The hGAA devices include a fully-depleted silicon-on-insulator (FD-SOI) under the channel layers in the same footprint as the hGAA. The buried dielectric isolation layer of the FD-SOI includes one or more of silicon oxide (SiOx), silicon nitride (SiN), silicon carbide (SiC), and a high-k material, and the buried dielectric isolation layer has a thickness in a range of from 0 nm to 10 nm.
Claims20
A method of forming a semiconductor device, the method comprising:
- forming a dummy gate on a top surface of a film stack on a substrate;
- forming a source trench and a drain trench adjacent to the film stack, the film stack comprising a plurality of layers extending between the source trench and the drain trench;
- forming an opening on a bottom surface of the film stack;
- forming a silicon layer in the opening, the silicon layer having a top surface and a bottom surface and extending below the dummy gate and between the source trench and the drain trench;
- and
- forming a buried dielectric isolation layer directly on the bottom surface of the silicon layer, the buried dielectric isolation layer extending the entire length of the source trench and the drain trench and having a thickness.
A method of forming a semiconductor device, the method comprising:
- forming a superlattice structure on a top surface of a substrate, the superlattice structure comprising a plurality of channel layers and a corresponding plurality of semiconductor material layers alternatingly arranged in a plurality of stacked pairs;
- forming a dummy gate on a top surface of the superlattice structure;
- forming a source trench and a drain trench adjacent to the superlattice structure, the plurality of semiconductor material layers and plurality of channel layers extending between the source trench and the drain trench;
- forming an opening on a bottom surface of the superlattice structure;
- forming a silicon layer in the opening, the silicon layer having a top surface and a bottom surface and extending below the dummy gate and between the source trench and the drain trench;
- and
- forming a buried dielectric isolation layer directly on the bottom surface of the silicon layer, the buried dielectric isolation layer extending the entire length of the source trench and the drain trench and having a thickness.
Dependencies are inferred from the claim text.