H10D 30/675
Group iii-v materials, group ii-vi materials, group iv-vi materials, selenium or tellurium
Official title: {Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium}
H10D30/675 (Group iii-v materials, group ii-vi materials, group iv-vi materials, selenium or tellurium) appears on 1,604 US grants and 1,763 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,604
- Published applications
- 1,763
- Assignees
- 460
- Inventors
- 2,839
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 4 | 0 |
| 1978 | 5 | 0 |
| 1979 | 5 | 0 |
| 1980 | 3 | 0 |
| 1981 | 3 | 0 |
| 1982 | 7 | 0 |
| 1983 | 7 | 0 |
| 1984 | 5 | 0 |
| 1985 | 4 | 0 |
| 1986 | 11 | 0 |
| 1987 | 8 | 0 |
| 1988 | 8 | 0 |
| 1989 | 15 | 0 |
| 1990 | 10 | 0 |
| 1991 | 7 | 0 |
| 1992 | 7 | 0 |
| 1993 | 7 | 0 |
| 1994 | 2 | 0 |
| 1995 | 7 | 0 |
| 1996 | 11 | 0 |
| 1997 | 11 | 0 |
| 1998 | 8 | 0 |
| 1999 | 13 | 0 |
| 2000 | 10 | 0 |
| 2001 | 12 | 5 |
| 2002 | 9 | 10 |
| 2003 | 6 | 16 |
| 2004 | 12 | 14 |
| 2005 | 9 | 25 |
| 2006 | 19 | 41 |
| 2007 | 10 | 34 |
| 2008 | 23 | 41 |
| 2009 | 23 | 36 |
| 2010 | 29 | 47 |
| 2011 | 50 | 65 |
| 2012 | 27 | 48 |
| 2013 | 51 | 67 |
| 2014 | 65 | 65 |
| 2015 | 64 | 92 |
| 2016 | 107 | 124 |
| 2017 | 128 | 139 |
| 2018 | 105 | 104 |
| 2019 | 111 | 101 |
| 2020 | 104 | 148 |
| 2021 | 90 | 102 |
| 2022 | 89 | 95 |
| 2023 | 82 | 138 |
| 2024 | 73 | 93 |
| 2025 | 84 | 77 |
| 2026 | 43 | 36 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- High electron mobility transistor with helping gate6 Oct 2026US 12,757,447 B2Taiwan Semiconductor Manufacturing Company.Ltd
- GaN power device and manufacturing method thereof6 Oct 2026US 12,757,448 B2Peking University
- Method of selectively forming crystalline boron-doped silicon germanium on a surface6 Oct 2026US 12,757,647 B2ASM IP Holding B. V.
- Complementary transistor and semiconductor device8 Sep 2026US 12,733,254 B2Sony Group Corporation
- Dram devices having molybdenum sulfide channel1 Sep 2026US 12,723,307 B2APPLIED Materials.Inc.
- Tellurium oxide semiconductor thin-film transistor comprising tellurium interlayer and method for manufacturing the same24 Sep 2026US 2026/0293214 A1Postech Research and Business Development Foundation
- Laminate for manufacturing flexible transparent thin-film transistor, and flexible transparent thin-film transistor and manufacturing method thereof17 Sep 2026US 2026/0282453 A1Dongwoo Fine-Chem Co., Ltd.
- Semiconductor device27 Aug 2026US 2026/0255604 A1Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor device, electronic apparatus including the same, and method of manufacturing the semiconductor device13 Aug 2026US 2026/0239674 A1Samsung Electronics Co., Ltd.
- Semiconductor device and manufacturing method therefor16 Jul 2026US 2026/0206501 A1Jusung Engineering Co., Ltd.
Most cited
By later US patents
- Methods and devices for fabricating and assembling printable semiconductor elements883US 7,622,367 B1The Board of Trustees of the University of Illinois · 2009
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Silicide regions in vertical gate all around (VGAA) devices and methods of forming same841US 9,412,817 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Stretchable semiconductor elements and stretchable electrical circuits765US 7,557,367 B2The Board of Trustees of the University of Illinois · 2009
- Optical systems fabricated by printing-based assembly564US 7,972,875 B2The Board of Trustees of the University of Illinois · 2011