Tellurium oxide semiconductor thin-film transistor comprising tellurium interlayer and method for manufacturing the same

Abstract

Disclosed is a tellurium oxide semiconductor thin-film transistor comprising tellurium interlayer and method for manufacturing the same. In detail, present disclosure relates to a thin-film transistor, the thin-film transistor comprising: a semiconductor layer comprising a tellurium-based amorphous p-type semiconductor; a source electrode and a drain electrode located spaced apart from each other; and an interlayer comprising a first interlayer located between the semiconductor layer and the source electrode and a second interlayer located between the semiconductor layer and the drain electrode, wherein the first interlayer and the second interlayer each independently comprise at least one interlayer element selected from the group consisting of a Group 14 element, a Group 15 element, and a Group 16 element of the periodic table. The present disclosure has the effect of providing a TFT exhibiting excellent electrical performance with improved electron field effect mobility and on-current value by comprising a interlayer.

Dependencies are inferred from the claim text.