Laminate for manufacturing flexible transparent thin-film transistor, and flexible transparent thin-film transistor and manufacturing method thereof

A flexible thin-film transistor comprising:

• a flexible substrate;
• a protective layer provided on the flexible substrate;
• a gate electrode provided on the protective layer;
• a gate insulating layer provided on the gate electrode;
• a source electrode and drain electrode provided on the gate insulating layer so as to be spaced apart from each other;
• and
• a transparent active layer provided on the gate insulating layer having the source electrode and drain electrode provided thereon, which is in contact with the source electrode and the drain electrode.

A method for manufacturing a flexible thin-film transistor, comprising steps of:

• forming a separation layer on a carrier substrate;
• forming a protective layer on the carrier substrate having the separation layer formed thereon so as to cover the separation layer;
• forming a gate electrode on the protective layer;
• forming a gate insulating layer on the gate electrode;
• forming a source electrode and a drain electrode on the gate insulating layer so as to be spaced apart from each other;
• forming, on the gate insulating layer having the source electrode and the drain electrode formed thereon, a transparent active layer provided so as to be in contact with the source electrode and the drain electrode;
• forming a passivation layer on the source electrode, the drain electrode, and the transparent active layer;
• peeling off the carrier substrate by cutting out portions where the carrier substrate and the protective layer are in direct contact;
• and
• transferring a laminate from which the carrier substrate has been peeled off to a flexible substrate.