H10D 30/6744
Monocrystalline silicon
Official title: {Monocrystalline silicon}
H10D30/6744 (Monocrystalline silicon) appears on 1,653 US grants and 1,616 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,653
- Published applications
- 1,616
- Assignees
- 288
- Inventors
- 2,023
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 3 | 0 |
| 1986 | 1 | 0 |
| 1987 | 3 | 0 |
| 1988 | 2 | 0 |
| 1989 | 3 | 0 |
| 1990 | 1 | 0 |
| 1991 | 8 | 0 |
| 1992 | 9 | 0 |
| 1993 | 14 | 0 |
| 1994 | 10 | 0 |
| 1995 | 10 | 0 |
| 1996 | 14 | 0 |
| 1997 | 19 | 0 |
| 1998 | 21 | 0 |
| 1999 | 29 | 0 |
| 2000 | 25 | 0 |
| 2001 | 16 | 10 |
| 2002 | 19 | 30 |
| 2003 | 36 | 36 |
| 2004 | 34 | 40 |
| 2005 | 34 | 56 |
| 2006 | 37 | 56 |
| 2007 | 34 | 52 |
| 2008 | 29 | 77 |
| 2009 | 37 | 40 |
| 2010 | 53 | 23 |
| 2011 | 40 | 33 |
| 2012 | 29 | 37 |
| 2013 | 32 | 43 |
| 2014 | 41 | 45 |
| 2015 | 50 | 55 |
| 2016 | 79 | 102 |
| 2017 | 101 | 111 |
| 2018 | 104 | 111 |
| 2019 | 138 | 135 |
| 2020 | 133 | 152 |
| 2021 | 99 | 88 |
| 2022 | 74 | 73 |
| 2023 | 75 | 73 |
| 2024 | 69 | 66 |
| 2025 | 62 | 49 |
| 2026 | 23 | 23 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for manufacturing a nanowire using an inducing particle in a guide trench, method for manufacturing a thin film transistor, thin film transistor, and semiconductor device8 Sep 2026US 12,733,413 B2Boe Technology Group Co., Ltd.
- Transistor control device and control method25 Aug 2026US 12,720,767 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Single process double gate and variable threshold voltage MOSFET25 Aug 2026US 12,720,793 B2International Business Machines Corporation
- Method of using semiconductor device and method of making18 Aug 2026US 12,713,681 B2Taiwan Semiconductor Manufacturing Company.Ltd
- SOI device structure for robust isolation4 Aug 2026US 12,701,754 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Ferroelectric memory device1 Oct 2026US 2026/0304778 A1Samsung Electronics Co., Ltd.
- Digit line formation in vertical three-dimensional (3d) memory10 Sep 2026US 2026/0271277 A1Micron Technology, Inc.
- Systems and methods for tuning porous bandgaps to reduce thermal donor effects20 Aug 2026US 2026/0247673 A1IQE plc
- Semiconductor device13 Aug 2026US 2026/0239662 A1Minebea Power Semiconductor Device Inc.
- Source/drains in semiconductor devices and methods of forming thereof16 Jul 2026US 2026/0206257 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- FINFETs with wrap-around silicide and method forming the same1,436US 9,608,116 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Method for manufacturing a semiconductor device1,352US 5,643,826 ASemiconductor Energy Laboratory Co.Ltd. · 1997
- Method for manufacturing a semiconductor device972US 5,923,962 ASemiconductor Energy Laboratory Co.Ltd. · 1999
- Silicide regions in vertical gate all around (VGAA) devices and methods of forming same841US 9,412,817 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Single crystal silicon arrayed devices for display panels540US 5,317,236 AKopin Corporation · 1994