Single process double gate and variable threshold voltage MOSFET

A metal oxide semiconductor field-effect transistor (MOSFET) device, comprising:

• a channel in between a source region and a drain region;
• a plurality of gates comprising:
• a first gate disposed on a first side of the channel at a frontside of the MOSFET device;
• and
• a second gate disposed on a second side of the channel directly opposite the first gate at a backside of the MOSFET device, wherein a portion of the first gate is located in between and physically separating the source region from the drain region;
• gate spacers offsetting the first gate from the source region and the drain region, wherein:
• the first gate is of a first width, the first width in a direction perpendicular to each of the gate spacers;
• the second gate is of a second width, the second width parallel to the first width;
• and
• the first width is greater than the second width;
• and
• a gate contact in direct contact with the first gate and the second gate.

A method of forming a metal oxide semiconductor field-effect transistor (MOSFET) device, the method comprising:

• forming a sacrificial gate on a first side of a channel at a frontside of the MOSFET device;
• forming gate spacers alongside the sacrificial gate;
• forming a source region and a drain region on opposite sides of the sacrificial gate, offset from the sacrificial gate by the gate spacers;
• removing and replacing the sacrificial gate with a first gate;
• and
• forming a second gate on a second side of the channel directly opposite the first gate at a backside of the MOSFET device, wherein:
• a portion of the first gate is located in between and physically separating the source region from the drain region;
• the first gate is of a first width, the first width in a direction perpendicular to each of the gate spacers;
• the second gate is of a second width, the second width parallel to the first width;
• and
• the first width is greater than the second width.