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US 12,720,767 B2Granted
Transistor control device and control method
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsBastien Giraud, François Andrieu, Yasser Moursy
Life of this patent
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Abstract
An FDSOI transistor control device includes a plurality of first wells having a first type of conductivity, each first well being associated with a group of transistors, and at least one second well having a second type of conductivity, formed under and around the first wells (21). A bias circuit is configured to apply at least one first bias voltage to the first wells and at least one second bias voltage to at least one second well. All of the transistors may have the second type of conductivity.
Claims16
A transistor control device comprising:
- a substrate based on a semiconductive material, having a first type of conductivity,
- an insulating layer based on a dielectric material on the substrate,
- an active layer based on the semiconductive material, located on the insulating layer,
- a plurality of transistors each comprising a channel formed in the active layer and configured to be fully depleted,
- a plurality of first wells formed in the substrate and having a first type of conductivity, each first well being associated with and disposed under a group of transistors of the plurality of transistors, the group of transistors being arranged in a first direction and the plurality of wells being arranged in a second direction crossing the first direction,
- at least one second well having a second type of conductivity, each second well being formed in the substrate under and around each of the plurality of first wells, so as to isolate each of the plurality of first wells from one another in the second direction and from the substrate, the at least one second well comprising one or more first wells each having only the first type of conductivity, and
- a bias circuit configured to apply at least one first bias voltage to the plurality of first wells, and at least one second bias voltage to the at least one second well,
- wherein all of the transistors of the plurality of transistors have the second type of conductivity.
5 more elements
A method for controlling a transistor control device, the transistor control device comprising:
- a substrate based on a semiconductive material, having a first type of conductivity,
- an insulating layer based on a dielectric material on the substrate,
- an active layer based on the semiconductive material, located on the insulating layer,
- a plurality of transistors each comprising a channel formed in the active layer and configured to be fully depleted,
- a plurality of first wells formed in the substrate and having a first type of conductivity, each first well being associated with and disposed under a group of transistors of the plurality of transistors,
- at least one second well having a second type of conductivity, formed in the substrate under and around the plurality of first wells, so as to isolate the plurality of first wells from one another and vis-à-vis the substrate, the at least one second well comprising one or more first wells each having only the first type of conductivity, and
- a bias circuit configured to apply at least one first bias voltage to the plurality of first wells, and at least one second bias voltage to the at least one second well,
- wherein all of the transistors of the plurality of transistors have the second type of conductivity,
- the method comprising:
- at a first time,
- applying a first bias voltage to at least one first well of the plurality of first wells, and
- applying a second bias voltage to the at least one second well, the at least one second well surrounding the at least one first well,
- the applications of the first and second voltages being such that there is no electrical conduction between the at least one first well and the at least one second well, and
- at a second time,
- applying a third bias voltage to at least one first well of the plurality of first wells, and
- applying a fourth bias voltage to the at least one second well surrounding the at least one first well, the third and fourth voltages being different from the first and second voltages.
13 more elements
Dependencies are inferred from the claim text.